Part Details for NXH80B120H2Q0SG by onsemi
Overview of NXH80B120H2Q0SG by onsemi
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for NXH80B120H2Q0SG
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
48AC1760
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Newark | Igbt, Module, N-Ch, 1.2Kv, 40A, Transistor Polarity:N Channel, Dc Collector Current:40A, Collector Emitter Saturation Voltage Vce(On):2.2V, Power Dissipation Pd:103W, Collector Emitter Voltage V(Br)Ceo:1.2Kv, Transistor Case Rohs Compliant: Yes |Onsemi NXH80B120H2Q0SG Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 0 |
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Buy Now | |
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DISTI #
NXH80B120H2Q0SG
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Avnet Americas | Transistor IGBT Module N-CH 1.2kV 40A ±20V Screw Tray (Alt: NXH80B120H2Q0SG) RoHS: Compliant Min Qty: 21 Package Multiple: 1 Lead time: 0 Weeks, 2 Days | 688 Partner Stock |
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$30.3180 / $36.1860 | Buy Now |
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Bristol Electronics | 24 |
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RFQ | ||
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Quest Components | 19 |
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$91.6776 / $107.8560 | Buy Now | |
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Rochester Electronics | NXH80B120H2Q0 - Power Integrated Module, Dual Boost, 1200 V, 40 A IGBT + 1200 V, 15 A SiC Diode Bare copper DBC RoHS: Compliant Status: End of Life / Last Time Buy Min Qty: 1 | 28543 |
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$67.4000 / $79.3000 | Buy Now |
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DISTI #
NXH80B120H2Q0SG
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Avnet Americas | Transistor IGBT Module N-CH 1.2kV 40A ±20V Screw Tray (Alt: NXH80B120H2Q0SG) RoHS: Compliant Min Qty: 21 Package Multiple: 1 Lead time: 0 Weeks, 2 Days | 688 Partner Stock |
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$30.3180 / $36.1860 | Buy Now |
|
DISTI #
NXH80B120H2Q0SG
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Avnet Americas | Transistor IGBT Module N-CH 1.2kV 40A ±20V Screw Tray (Alt: NXH80B120H2Q0SG) RoHS: Compliant Min Qty: 21 Package Multiple: 1 Lead time: 0 Weeks, 2 Days | 688 Partner Stock |
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$30.3180 / $36.1860 | Buy Now |
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DISTI #
2835630
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Farnell | RoHS: Compliant Min Qty: 1 Container: Each | 28565 |
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$50.5071 | Buy Now |
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Flip Electronics | Stock, ship today | 688 |
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$24.4500 | RFQ |
Part Details for NXH80B120H2Q0SG
NXH80B120H2Q0SG CAD Models
NXH80B120H2Q0SG Part Data Attributes
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NXH80B120H2Q0SG
onsemi
Buy Now
Datasheet
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Compare Parts:
NXH80B120H2Q0SG
onsemi
Power Integrated Module, Dual Boost, 1200 V, 40 A IGBT + 1200 V, 15 A SiC Diode Bare copper DBC, 24-BTRAY
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| Pbfree Code | Yes | |
| Part Life Cycle Code | End Of Life | |
| Ihs Manufacturer | ONSEMI | |
| Manufacturer Package Code | 180AJ | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Case Connection | ISOLATED | |
| Collector Current-Max (IC) | 41 A | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Configuration | COMMON COLLECTOR, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR | |
| Gate-Emitter Thr Voltage-Max | 6.4 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JESD-30 Code | R-XUFM-X22 | |
| JESD-609 Code | e3 | |
| Number of Elements | 2 | |
| Number of Terminals | 22 | |
| Operating Temperature-Max | 125 °C | |
| Operating Temperature-Min | -40 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 103 W | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| VCEsat-Max | 2.5 V |