Datasheets
PDTB113ET,215 by:

PDTB113ET - PNP 500 mA, 50 V resistor-equipped transistor; R1 = 1 kOhm, R2 = 1 kOhm TO-236 3-Pin

Part Details for PDTB113ET,215 by NXP Semiconductors

Overview of PDTB113ET,215 by NXP Semiconductors

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Applications Consumer Electronics Audio and Video Systems

Price & Stock for PDTB113ET,215

Part # Distributor Description Stock Price Buy
Rochester Electronics PDTB113ZT - PNP 500mA, 50V resistor-equipped transistor RoHS: Compliant Status: Active Min Qty: 1 2900
  • 1 $0.0245
  • 25 $0.0240
  • 100 $0.0230
  • 500 $0.0221
  • 1,000 $0.0208
$0.0208 / $0.0245 Buy Now

Part Details for PDTB113ET,215

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PDTB113ET,215 Part Data Attributes

PDTB113ET,215 NXP Semiconductors
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PDTB113ET,215 NXP Semiconductors PDTB113ET - PNP 500 mA, 50 V resistor-equipped transistor; R1 = 1 kOhm, R2 = 1 kOhm TO-236 3-Pin
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer NXP SEMICONDUCTORS
Part Package Code TO-236
Package Description PLASTIC PACKAGE-3
Pin Count 3
Manufacturer Package Code SOT23
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 1
Collector Current-Max (IC) 0.5 A
Collector-Emitter Voltage-Max 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 33
JEDEC-95 Code TO-236AB
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type PNP
Power Dissipation-Max (Abs) 0.25 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for PDTB113ET,215

This table gives cross-reference parts and alternative options found for PDTB113ET,215. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of PDTB113ET,215, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
PDTB113ET TRANSISTOR 500 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, PLASTIC PACKAGE-3, BIP General Purpose Small Signal NXP Semiconductors PDTB113ET,215 vs PDTB113ET
PDTB113ET,235 Small Signal Bipolar Transistor Nexperia PDTB113ET,215 vs PDTB113ET,235
PDTB113ET,235 TRANSISTOR 500 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, PLASTIC PACKAGE-3, BIP General Purpose Small Signal NXP Semiconductors PDTB113ET,215 vs PDTB113ET,235
PDTB113ET,215 PDTB113ET - PNP 500 mA, 50 V resistor-equipped transistor; R1 = 1 kOhm, R2 = 1 kOhm@en-us TO-236 3-Pin Nexperia PDTB113ET,215 vs PDTB113ET,215
PDTB113ET Small Signal Bipolar Transistor Nexperia PDTB113ET,215 vs PDTB113ET
Part Number Description Manufacturer Compare
PDTB113ET,235 TRANSISTOR 500 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, PLASTIC PACKAGE-3, BIP General Purpose Small Signal NXP Semiconductors PDTB113ET,215 vs PDTB113ET,235
PDTB113EK TRANSISTOR 500 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236, PLASTIC, SC-59A, 3 PIN, BIP General Purpose Small Signal NXP Semiconductors PDTB113ET,215 vs PDTB113EK
PDTB113ZT,215 PDTB113ZT - PNP 500 mA, 50 V resistor-equipped transistor; R1 = 1 kOhm, R2 = 10 kOhm TO-236 3-Pin NXP Semiconductors PDTB113ET,215 vs PDTB113ZT,215
PDTB113ET Small Signal Bipolar Transistor Nexperia PDTB113ET,215 vs PDTB113ET
PDTB113ZS TRANSISTOR 500 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, SC-43A, 3 PIN, BIP General Purpose Small Signal NXP Semiconductors PDTB113ET,215 vs PDTB113ZS
PDTB113ES TRANSISTOR 500 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, SC-43A, 3 PIN, BIP General Purpose Small Signal NXP Semiconductors PDTB113ET,215 vs PDTB113ES
PDTB113ET,235 Small Signal Bipolar Transistor Nexperia PDTB113ET,215 vs PDTB113ET,235
PDTB113ET,215 PDTB113ET - PNP 500 mA, 50 V resistor-equipped transistor; R1 = 1 kOhm, R2 = 1 kOhm@en-us TO-236 3-Pin Nexperia PDTB113ET,215 vs PDTB113ET,215
PDTB113ET TRANSISTOR 500 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, PLASTIC PACKAGE-3, BIP General Purpose Small Signal NXP Semiconductors PDTB113ET,215 vs PDTB113ET
PDTB113ZT,235 TRANSISTOR 500 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, PLASTIC PACKAGE-3, BIP General Purpose Small Signal NXP Semiconductors PDTB113ET,215 vs PDTB113ZT,235

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