Part Details for PDTB113EU by Nexperia
Overview of PDTB113EU by Nexperia
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Audio and Video Systems
Price & Stock for PDTB113EU
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
37AJ0477
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Newark | Brt Trans, 1K/1Kohm, Sot-323-3, Digital Transistor Polarity:Single Pnp, Collector Emitter Voltage V(Br)Ceo:-50V, Continuous Collector Current Ic:-500Ma, Base Input Resistor R1:1Kohm, Base-Emitter Resistor R2:1Kohm, Resistor Ratio, R1Rohs Compliant: Yes |Nexperia PDTB113EU RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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$0.0540 / $0.2660 | Buy Now |
Part Details for PDTB113EU
PDTB113EU CAD Models
PDTB113EU Part Data Attributes
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PDTB113EU
Nexperia
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Datasheet
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PDTB113EU
Nexperia
Small Signal Bipolar Transistor
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | NEXPERIA | |
Package Description | SMALL OUTLINE, R-PDSO-G3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Date Of Intro | 2017-02-17 | |
Samacsys Manufacturer | Nexperia | |
Additional Feature | BUILT IN BIAS RESISTANCE RATIO IS 1 | |
Collector Current-Max (IC) | 0.5 A | |
Collector-Emitter Voltage-Max | 50 V | |
Configuration | SINGLE WITH BUILT-IN RESISTOR | |
DC Current Gain-Min (hFE) | 33 | |
JESD-30 Code | R-PDSO-G3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | PNP | |
Reference Standard | AEC-Q101; IEC-60134 | |
Surface Mount | YES | |
Terminal Finish | TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Transition Frequency-Nom (fT) | 140 MHz |