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Transistors Power Field-Effect Transistors PH2525L,115

Transistors
PH2525L,115
Description: N-channel TrenchMOS logic level FET@en-us SOIC 4-Pin

Overview of PH2525L,115 by Nexperia

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Space Technology Environmental Monitoring Internet of Things (IoT) Industrial Automation Smart Cities Agriculture Technology Virtual Reality (VR), Augmented Reality (AR), and Vision Systems Medical Imaging Consumer Electronics Security and Surveillance Aerospace and Defense Healthcare Robotics and Drones

Price & Stock for PH2525L,115 by Nexperia

Part # Manufacturer Description Stock Price Buy
DISTI # PH2525L,115
Avnet Americas Trans MOSFET N-CH 25V 100A 5-Pin(4+Tab) LFPAK T/R - Tape and Reel (Alt: PH2525L,115) RoHS: Compliant Min Qty: 1527 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Reel 4100 Partner Stock
RFQ
Rochester Electronics PH2525L - 100A, 25V, 0.0039ohm, N-Channel MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 15418
  • 1 $0.2389
  • 25 $0.2341
  • 100 $0.2246
  • 500 $0.2150
  • 1,000 $0.2031
$0.2031 / $0.2389 Buy Now

CAD Models for PH2525L,115 by Nexperia
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Part Data Attributes for PH2525L,115 by Nexperia
Parametric Data

PH2525L,115
Nexperia
Buy Now
-
-
Rohs Code
Yes
Part Life Cycle Code
Obsolete
Ihs Manufacturer
NEXPERIA
Part Package Code
SOIC
Package Description
LFPAK-4
Pin Count
4
Manufacturer Package Code
SOT669
Reach Compliance Code
not_compliant
ECCN Code
EAR99
HTS Code
8541.29.00.75
Date Of Intro
2017-02-01
Samacsys Manufacturer
Nexperia
Avalanche Energy Rating (Eas)
320 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
25 V
Drain Current-Max (ID)
100 A
Drain-source On Resistance-Max
0.0039 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
MO-235
JESD-30 Code
R-PSSO-G4
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
1
Number of Terminals
4
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
62.5 W
Pulsed Drain Current-Max (IDM)
300 A
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Finish
TIN
Terminal Form
GULL WING
Terminal Position
SINGLE
Time@Peak Reflow Temperature-Max (s)
30
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Want to compare parts?
  1. PH2525L,115
    Nexperia
    N-channel TrenchMOS logic level FET@en-us SOIC 4-Pin
    VS

Alternate Parts for PH2525L,115

This table gives cross-reference parts and alternative options found for PH2525L,115. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of PH2525L,115, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
PH2625L Power Field-Effect Transistor Nexperia PH2525L,115 vs PH2625L
Part Number Description Manufacturer Compare
PH2525LT/R TRANSISTOR 100 A, 25 V, 0.0039 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235, PLASTIC, LFPAK-4, FET General Purpose Power NXP Semiconductors PH2525L,115 vs PH2525LT/R
PH2625L Power Field-Effect Transistor Nexperia PH2525L,115 vs PH2625L

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