Part Details for PHD21N06LT by Philips Semiconductors
Overview of PHD21N06LT by Philips Semiconductors
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Part Details for PHD21N06LT
PHD21N06LT CAD Models
PHD21N06LT Part Data Attributes
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PHD21N06LT
Philips Semiconductors
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Datasheet
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PHD21N06LT
Philips Semiconductors
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
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Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | PHILIPS SEMICONDUCTORS | |
Package Description | , | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Configuration | SINGLE | |
Drain Current-Max (ID) | 21 A | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 69 W | |
Surface Mount | YES |