Datasheets
PHD55N03LTA by:

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

Part Details for PHD55N03LTA by Philips Semiconductors

Overview of PHD55N03LTA by Philips Semiconductors

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Price & Stock for PHD55N03LTA

Part # Distributor Description Stock Price Buy
Quest Components 55 A, 25 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 1288
  • 1 $1.0500
  • 80 $0.4900
  • 409 $0.4375
$0.4375 / $1.0500 Buy Now
Velocity Electronics Our Stock 16
RFQ
Component Electronics, Inc IN STOCK SHIP TODAY 10
  • 1 $0.7700
  • 100 $0.5800
  • 1,000 $0.5000
$0.5000 / $0.7700 Buy Now

Part Details for PHD55N03LTA

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PHD55N03LTA Part Data Attributes

PHD55N03LTA Philips Semiconductors
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PHD55N03LTA Philips Semiconductors Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer PHILIPS SEMICONDUCTORS
Reach Compliance Code not_compliant
ECCN Code EAR99
Configuration SINGLE
Drain Current-Max (ID) 55 A
FET Technology METAL-OXIDE SEMICONDUCTOR
Moisture Sensitivity Level 1
Number of Elements 1
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 85 W
Surface Mount YES

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