Part Details for PHN1013 by Philips Semiconductors
Overview of PHN1013 by Philips Semiconductors
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- Number of Functional Equivalents:
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Price & Stock for PHN1013
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ComSIT USA | TRENCHMOS TRANSISTOR Power Field-Effect Transistor, 10A I(D), 30V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA RoHS: Not Compliant | Europe - 17950 |
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Part Details for PHN1013
PHN1013 CAD Models
PHN1013 Part Data Attributes
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PHN1013
Philips Semiconductors
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Datasheet
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PHN1013
Philips Semiconductors
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
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| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | PHILIPS SEMICONDUCTORS | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Configuration | SINGLE | |
| Drain Current-Max (ID) | 10 A | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 2.5 W | |
| Surface Mount | YES | |
| Terminal Finish | Tin/Lead (Sn/Pb) |