Datasheets
PJA3411-AU_R1_000A1 by:

Power Field-Effect Transistor,

Part Details for PJA3411-AU_R1_000A1 by PanJit Semiconductor

Overview of PJA3411-AU_R1_000A1 by PanJit Semiconductor

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Price & Stock for PJA3411-AU_R1_000A1

Part # Distributor Description Stock Price Buy
DISTI # 241-PJA3411AUR1000A1
Mouser Electronics MOSFET 30V P-Channel Enhancement Mode MOSFET RoHS: Compliant 0
  • 1 $0.3800
  • 10 $0.2670
  • 100 $0.1200
  • 1,000 $0.0930
  • 3,000 $0.0810
$0.0810 / $0.3800 Order Now
DISTI # PJA3411-AU-R1
TME Transistor: P-MOSFET, unipolar, -20V, -3.1A, Idm: -12.4A, 1.25W Min Qty: 10 3000
  • 10 $0.0792
  • 50 $0.0680
  • 250 $0.0602
  • 1,000 $0.0540
  • 3,000 $0.0504
  • 9,000 $0.0487
$0.0487 / $0.0792 Buy Now
NAC 30V P-Channel Enhancement Mode MOSFET RoHS: Compliant Min Qty: 1 Package Multiple: 3000 Container: Reel 147257
  • 15,000 $0.0400
  • 30,000 $0.0360
$0.0360 / $0.0400 Buy Now
Chip1Cloud SOT-23, MOSFET 4000
RFQ

Part Details for PJA3411-AU_R1_000A1

PJA3411-AU_R1_000A1 CAD Models

PJA3411-AU_R1_000A1 Part Data Attributes:

PJA3411-AU_R1_000A1 PanJit Semiconductor
Buy Now Datasheet
Compare Parts:
PJA3411-AU_R1_000A1 PanJit Semiconductor Power Field-Effect Transistor,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer PANJIT INTERNATIONAL INC
Package Description SOT-23, 3 PIN
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Samacsys Manufacturer PANJIT
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V
Drain Current-Max (ID) 3.1 A
Drain-source On Resistance-Max 0.1 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 32 pF
JESD-30 Code R-PDSO-G3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type P-CHANNEL
Power Dissipation Ambient-Max 1.25 W
Power Dissipation-Max (Abs) 1.25 W
Pulsed Drain Current-Max (IDM) 12.4 A
Reference Standard AEC-Q101; IEC-61249; MIL-STD-750
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for PJA3411-AU_R1_000A1

This table gives cross-reference parts and alternative options found for PJA3411-AU_R1_000A1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of PJA3411-AU_R1_000A1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
PJA3411_R1_00001 Power Field-Effect Transistor, 3.1A I(D), 20V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 PanJit Semiconductor PJA3411-AU_R1_000A1 vs PJA3411_R1_00001
PJA3411-AU_R2_000A1 Power Field-Effect Transistor, PanJit Semiconductor PJA3411-AU_R1_000A1 vs PJA3411-AU_R2_000A1
PJA3411_R2_00001 Power Field-Effect Transistor, 3.1A I(D), 20V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 PanJit Semiconductor PJA3411-AU_R1_000A1 vs PJA3411_R2_00001
Part Number Description Manufacturer Compare
RTQ030P02FRATR Power Field-Effect Transistor, 3A I(D), 20V, 0.09ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TSMT6, 6 PIN ROHM Semiconductor PJA3411-AU_R1_000A1 vs RTQ030P02FRATR
PJA3411-AU_R2_000A1 Power Field-Effect Transistor, PanJit Semiconductor PJA3411-AU_R1_000A1 vs PJA3411-AU_R2_000A1
TSM3441CX6RF Power Field-Effect Transistor, 3.3A I(D), 20V, 0.09ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-6 Taiwan Semiconductor PJA3411-AU_R1_000A1 vs TSM3441CX6RF
PJA3411_R1_00001 Power Field-Effect Transistor, 3.1A I(D), 20V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 PanJit Semiconductor PJA3411-AU_R1_000A1 vs PJA3411_R1_00001
FTS1003 Power Field-Effect Transistor, 3A I(D), 20V, 0.09ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TSSOP-8 SANYO Electric Co Ltd PJA3411-AU_R1_000A1 vs FTS1003
UT3413L-AE2-R Power Field-Effect Transistor, 3A I(D), 20V, 0.097ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, LEAD FREE PACKAGE-3 Unisonic Technologies Co Ltd PJA3411-AU_R1_000A1 vs UT3413L-AE2-R
UT3413G-AE3-R Power Field-Effect Transistor, 3A I(D), 20V, 0.097ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE PACKAGE-3 Unisonic Technologies Co Ltd PJA3411-AU_R1_000A1 vs UT3413G-AE3-R
PJA3411_R2_00001 Power Field-Effect Transistor, 3.1A I(D), 20V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 PanJit Semiconductor PJA3411-AU_R1_000A1 vs PJA3411_R2_00001
UT3413L-AE3-R Power Field-Effect Transistor, 3A I(D), 20V, 0.097ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE PACKAGE-3 Unisonic Technologies Co Ltd PJA3411-AU_R1_000A1 vs UT3413L-AE3-R
SSF2301 Power Field-Effect Transistor, 3A I(D), 20V, 0.09ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-3 Suzhou Good-Ark Electronics Co Ltd PJA3411-AU_R1_000A1 vs SSF2301

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