Datasheets
PJA3412-AU_R1_000A1 by:

Power Field-Effect Transistor,

Part Details for PJA3412-AU_R1_000A1 by PanJit Semiconductor

Overview of PJA3412-AU_R1_000A1 by PanJit Semiconductor

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Price & Stock for PJA3412-AU_R1_000A1

Part # Distributor Description Stock Price Buy
DISTI # 241-PJA3412AUR1000A1
Mouser Electronics MOSFET 20V N-Channel Enhancement Mode MOSFET RoHS: Compliant 3820
  • 1 $0.3700
  • 10 $0.2880
  • 100 $0.1790
  • 1,000 $0.0940
  • 3,000 $0.0850
  • 9,000 $0.0730
  • 24,000 $0.0680
  • 45,000 $0.0610
  • 99,000 $0.0590
$0.0590 / $0.3700 Buy Now
Quest Components POWER FIELD-EFFECT TRANSISTOR, 4.1A I(D), 20V, 0.056OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET 976
  • 1 $0.1740
  • 70 $0.1160
  • 432 $0.0928
$0.0928 / $0.1740 Buy Now
DISTI # PJA3412-AU-R1
TME Transistor: N-MOSFET, unipolar, 20V, 4.1A, Idm: 16.4A, 1.25W, SOT23 Min Qty: 5 2980
  • 5 $0.1564
  • 25 $0.0862
  • 100 $0.0775
  • 500 $0.0685
  • 3,000 $0.0616
  • 9,000 $0.0575
$0.0575 / $0.1564 Buy Now
NAC 20V N-Channel Enhancement Mode MOSFET RoHS: Compliant Min Qty: 1 Package Multiple: 3000 Container: Reel 1190593
  • 15,000 $0.0500
  • 30,000 $0.0400
$0.0400 / $0.0500 Buy Now
DISTI # PJA3412-AU_R1_000A1
Avnet Silica /A12/TR/7"""/HF/3K/SOT-23/MOS/SOT/NFET-20TMN/NF20T-QI27/PJ///" (Alt: PJA3412-AU_R1_000A1) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 3 Weeks, 6 Days Silica - 0
Buy Now

Part Details for PJA3412-AU_R1_000A1

PJA3412-AU_R1_000A1 CAD Models

PJA3412-AU_R1_000A1 Part Data Attributes:

PJA3412-AU_R1_000A1 PanJit Semiconductor
Buy Now Datasheet
Compare Parts:
PJA3412-AU_R1_000A1 PanJit Semiconductor Power Field-Effect Transistor,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer PANJIT INTERNATIONAL INC
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer PANJIT
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V
Drain Current-Max (ID) 4.1 A
Drain-source On Resistance-Max 0.056 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 16.4 A
Reference Standard AEC-Q101
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for PJA3412-AU_R1_000A1

This table gives cross-reference parts and alternative options found for PJA3412-AU_R1_000A1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of PJA3412-AU_R1_000A1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
PJA3412_R1_00001 Power Field-Effect Transistor, 4.1A I(D), 20V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 PanJit Semiconductor PJA3412-AU_R1_000A1 vs PJA3412_R1_00001
PJA3412_R2_00001 Power Field-Effect Transistor, 4.1A I(D), 20V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 PanJit Semiconductor PJA3412-AU_R1_000A1 vs PJA3412_R2_00001
Part Number Description Manufacturer Compare
DMN2104L-7 Power Field-Effect Transistor, 4.3A I(D), 20V, 0.053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 Diodes Incorporated PJA3412-AU_R1_000A1 vs DMN2104L-7
PJA3412_R2_00001 Power Field-Effect Transistor, 4.1A I(D), 20V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 PanJit Semiconductor PJA3412-AU_R1_000A1 vs PJA3412_R2_00001
PJA3412_R1_00001 Power Field-Effect Transistor, 4.1A I(D), 20V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 PanJit Semiconductor PJA3412-AU_R1_000A1 vs PJA3412_R1_00001
UT3414G-AE3-R Power Field-Effect Transistor, 4.2A I(D), 20V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE PACKAGE-3 Unisonic Technologies Co Ltd PJA3412-AU_R1_000A1 vs UT3414G-AE3-R

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