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Power Field-Effect Transistor,
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
241-PJA3412AUR1000A1
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Mouser Electronics | MOSFET 20V N-Channel Enhancement Mode MOSFET RoHS: Compliant | 3820 |
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$0.0590 / $0.3700 | Buy Now |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 4.1A I(D), 20V, 0.056OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 976 |
|
$0.0928 / $0.1740 | Buy Now |
DISTI #
PJA3412-AU-R1
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TME | Transistor: N-MOSFET, unipolar, 20V, 4.1A, Idm: 16.4A, 1.25W, SOT23 Min Qty: 5 | 2980 |
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$0.0575 / $0.1564 | Buy Now |
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NAC | 20V N-Channel Enhancement Mode MOSFET RoHS: Compliant Min Qty: 1 Package Multiple: 3000 Container: Reel | 1190593 |
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$0.0400 / $0.0500 | Buy Now |
DISTI #
PJA3412-AU_R1_000A1
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Avnet Silica | /A12/TR/7"""/HF/3K/SOT-23/MOS/SOT/NFET-20TMN/NF20T-QI27/PJ///" (Alt: PJA3412-AU_R1_000A1) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 3 Weeks, 6 Days | Silica - 0 |
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Buy Now |
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PJA3412-AU_R1_000A1
PanJit Semiconductor
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Datasheet
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Compare Parts:
PJA3412-AU_R1_000A1
PanJit Semiconductor
Power Field-Effect Transistor,
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | PANJIT INTERNATIONAL INC | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | PANJIT | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 20 V | |
Drain Current-Max (ID) | 4.1 A | |
Drain-source On Resistance-Max | 0.056 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 16.4 A | |
Reference Standard | AEC-Q101 | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 40 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for PJA3412-AU_R1_000A1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of PJA3412-AU_R1_000A1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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PJA3412_R1_00001 | Power Field-Effect Transistor, 4.1A I(D), 20V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 | PanJit Semiconductor | PJA3412-AU_R1_000A1 vs PJA3412_R1_00001 |
PJA3412_R2_00001 | Power Field-Effect Transistor, 4.1A I(D), 20V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 | PanJit Semiconductor | PJA3412-AU_R1_000A1 vs PJA3412_R2_00001 |