Datasheets
PJA3416AE_R2_00001 by:

Power Field-Effect Transistor, 6.5A I(D), 20V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3

Part Details for PJA3416AE_R2_00001 by PanJit Semiconductor

Overview of PJA3416AE_R2_00001 by PanJit Semiconductor

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Applications Automotive

Price & Stock for PJA3416AE_R2_00001

Part # Distributor Description Stock Price Buy
DISTI # 241-PJA3416AER200001
Mouser Electronics MOSFET 20V N-Channel Enhancement Mode MOSFET-ESD Protected RoHS: Compliant 0
  • 12,000 $0.0710
$0.0710 Order Now
NAC 20V N-Channel Enhancement Mode MOSFET�ESD Protected RoHS: Compliant Min Qty: 12000 Package Multiple: 12000 0
RFQ

Part Details for PJA3416AE_R2_00001

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PJA3416AE_R2_00001 Part Data Attributes

PJA3416AE_R2_00001 PanJit Semiconductor
Buy Now Datasheet
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PJA3416AE_R2_00001 PanJit Semiconductor Power Field-Effect Transistor, 6.5A I(D), 20V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer PAN JIT INTERNATIONAL INC
Package Description GREEN, PLASTIC PACKAGE-3
Reach Compliance Code compliant
ECCN Code EAR99
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V
Drain Current-Max (ID) 6.5 A
Drain-source On Resistance-Max 0.022 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 32 A
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for PJA3416AE_R2_00001

This table gives cross-reference parts and alternative options found for PJA3416AE_R2_00001. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of PJA3416AE_R2_00001, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRLML6244TRPBF Power Field-Effect Transistor, 6.3A I(D), 20V, 0.021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, MICRO-3 Infineon Technologies AG PJA3416AE_R2_00001 vs IRLML6244TRPBF
Part Number Description Manufacturer Compare
UT3416L-AE3-R Power Field-Effect Transistor, 6.5A I(D), 20V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE PACKAGE-3 Unisonic Technologies Co Ltd PJA3416AE_R2_00001 vs UT3416L-AE3-R
IRLML6244TRPBF Power Field-Effect Transistor, 6.3A I(D), 20V, 0.021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, MICRO-3 Infineon Technologies AG PJA3416AE_R2_00001 vs IRLML6244TRPBF
ELM36402EA-S Power Field-Effect Transistor, 6.5A I(D), 20V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-26, 6 PIN ELM Technology Corp PJA3416AE_R2_00001 vs ELM36402EA-S

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