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Transistors / Power Field-Effect Transistors / PJD18N20_L2_00001
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PJD18N20_L2_00001 by:

Power Field-Effect Transistor,

Part Details for PJD18N20_L2_00001 by PanJit Semiconductor

Overview of PJD18N20_L2_00001 by PanJit Semiconductor

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Price & Stock for PJD18N20_L2_00001

Part # Distributor Description Stock Price Buy
DISTI # 241-PJD18N20L200001
Mouser Electronics MOSFET 200V N-Channel Enhancement Mode MOSFET RoHS: Compliant 13816
  • 1 $0.9200
  • 10 $0.8100
  • 100 $0.5530
  • 500 $0.4620
  • 1,000 $0.4040
  • 3,000 $0.3430
  • 6,000 $0.3300
  • 9,000 $0.3190
  • 24,000 $0.3060
$0.3060 / $0.9200 Buy Now
DISTI # PJD18N20-L2
TME Transistor: N-MOSFET, unipolar, 200V, 11A, Idm: 72A, 83W, TO252AA Min Qty: 1 0
  • 1 $0.7850
  • 5 $0.6460
  • 25 $0.5820
  • 100 $0.5140
  • 500 $0.4620
  • 3,000 $0.4310
  • 6,000 $0.4150
$0.4150 / $0.7850 RFQ
NAC MOS Function, TO Line, TO-252AA Package, 13in. Package Size RoHS: Compliant Min Qty: 1 Package Multiple: 3000 32654
  • 30,000 $0.3300
  • 60,000 $0.3200
$0.3200 / $0.3300 Buy Now
DISTI # PJD18N20_L2_00001
Avnet Silica 200V/18A/MOSFET/TO-252/SINGLE N-CH (Alt: PJD18N20_L2_00001) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 27 Weeks, 0 Days Silica - 0
Buy Now

Part Details for PJD18N20_L2_00001

PJD18N20_L2_00001 CAD Models

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PJD18N20_L2_00001 Part Data Attributes

Parametric Data
PJD18N20_L2_00001 PanJit Semiconductor
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PJD18N20_L2_00001 PanJit Semiconductor Power Field-Effect Transistor,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer PANJIT INTERNATIONAL INC
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer PANJIT
Avalanche Energy Rating (Eas) 72 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V
Drain Current-Max (ID) 18 A
Drain-source On Resistance-Max 0.16 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252AA
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 72 A
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for PJD18N20_L2_00001

This table gives cross-reference parts and alternative options found for PJD18N20_L2_00001. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of PJD18N20_L2_00001, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
PJP18N20_T0_00001 Power Field-Effect Transistor, PanJit Semiconductor PJD18N20_L2_00001 vs PJP18N20_T0_00001

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