There are no models available for this part yet.
Overview of PJD2NA60_L2_00001 by PanJit Semiconductor
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 1 listing )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| CO-142BNCX200-001 | Amphenol Cables on Demand | Amphenol CO-142BNCX200-001 BNC Male to BNC Male (RG142) 50 Ohm Coaxial Cable Assembly (High-Temp Teflon RG142B/U) 1ft | |
| FO-DUALSTLC00-001 | Amphenol Cables on Demand | Amphenol FO-DUALSTLC00-001 ST-LC Duplex Multimode 62.5/125 Fiber Optic Patch Cable (OFNR Riser) - 2 x ST Male to 2 x LC Male 1m | |
| CO-316SMAX200-001 | Amphenol Cables on Demand | Amphenol CO-316SMAX200-001 RG316 High Temperature Teflon Coaxial Cable - SMA Male to SMA Male 1ft |
Price & Stock for PJD2NA60_L2_00001 by PanJit Semiconductor
| Part # | Manufacturer | Description | Stock | Price | Buy | ||
|---|---|---|---|---|---|---|---|
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DISTI #
241-PJD2NA60L200001
|
Mouser Electronics | MOSFETs 600V N-Channel MOSFET RoHS: Compliant | 0 |
|
Order Now |
CAD Models for PJD2NA60_L2_00001 by PanJit Semiconductor
Part Data Attributes for PJD2NA60_L2_00001 by PanJit Semiconductor
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|---|---|
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Rohs Code
|
Yes
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Part Life Cycle Code
|
Obsolete
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Ihs Manufacturer
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PANJIT INTERNATIONAL INC
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Package Description
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GREEN, PLASTIC PACKAGE-3/2
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Reach Compliance Code
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not_compliant
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ECCN Code
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EAR99
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Avalanche Energy Rating (Eas)
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115 mJ
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Configuration
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SINGLE WITH BUILT-IN DIODE
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DS Breakdown Voltage-Min
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600 V
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Drain Current-Max (ID)
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2 A
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Drain-source On Resistance-Max
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4.4 Ω
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FET Technology
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METAL-OXIDE SEMICONDUCTOR
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JEDEC-95 Code
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TO-252AA
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JESD-30 Code
|
R-PSSO-G2
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Number of Elements
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1
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Number of Terminals
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2
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Operating Mode
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ENHANCEMENT MODE
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Package Body Material
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PLASTIC/EPOXY
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Package Shape
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RECTANGULAR
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Package Style
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SMALL OUTLINE
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Peak Reflow Temperature (Cel)
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NOT SPECIFIED
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Polarity/Channel Type
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N-CHANNEL
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Pulsed Drain Current-Max (IDM)
|
8 A
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Surface Mount
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YES
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Terminal Form
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GULL WING
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Terminal Position
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SINGLE
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Time@Peak Reflow Temperature-Max (s)
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NOT SPECIFIED
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Transistor Application
|
SWITCHING
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Transistor Element Material
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SILICON
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Alternate Parts for PJD2NA60_L2_00001
This table gives cross-reference parts and alternative options found for PJD2NA60_L2_00001. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of PJD2NA60_L2_00001, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| 2N65LG-TA3-T | Power Field-Effect Transistor, 2A I(D), 650V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE, TO-220, 3 PIN | Unisonic Technologies Co Ltd | PJD2NA60_L2_00001 vs 2N65LG-TA3-T |
| 2N65LG-TM3-T | Power Field-Effect Transistor, 2A I(D), 650V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, HALOGEN FREE PACKAGE-3 | Unisonic Technologies Co Ltd | PJD2NA60_L2_00001 vs 2N65LG-TM3-T |
| 2N60LG-TND-R | Power Field-Effect Transistor, 2A I(D), 600V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, TO-252D, 3/2 PIN | Unisonic Technologies Co Ltd | PJD2NA60_L2_00001 vs 2N60LG-TND-R |
| 2N65LG-TN3-R | Power Field-Effect Transistor, 2A I(D), 650V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, HALOGEN FREE PACKAGE-3 | Unisonic Technologies Co Ltd | PJD2NA60_L2_00001 vs 2N65LG-TN3-R |
| STD2HNK60Z | N-channel 600 V, 3.5 Ohm typ., 2 A SuperMESH Power MOSFET in a DPAK package | STMicroelectronics | PJD2NA60_L2_00001 vs STD2HNK60Z |
| PJ2N60CH | Power Field-Effect Transistor, 2A I(D), 600V, 4.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AB, TO-251, 3 PIN | Promax-Johnton Electronic Corporation | PJD2NA60_L2_00001 vs PJ2N60CH |
| 2N60LL-TMS2-T | Power Field-Effect Transistor, 2A I(D), 600V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, TO-251S2, 3 PIN | Unisonic Technologies Co Ltd | PJD2NA60_L2_00001 vs 2N60LL-TMS2-T |
| STD1HNK60Z-1 | 1.9A, 600V, 4.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251, IPAK-3 | STMicroelectronics | PJD2NA60_L2_00001 vs STD1HNK60Z-1 |
| 2N60LG-T2Q-T | Power Field-Effect Transistor, 2A I(D), 600V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN | Unisonic Technologies Co Ltd | PJD2NA60_L2_00001 vs 2N60LG-T2Q-T |
| 2N65L-TMA-T | Power Field-Effect Transistor, 2A I(D), 650V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, TO-251L, 3 PIN | Unisonic Technologies Co Ltd | PJD2NA60_L2_00001 vs 2N65L-TMA-T |