Part Details for PJD4NA60_L2_00001 by PanJit Semiconductor
Overview of PJD4NA60_L2_00001 by PanJit Semiconductor
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Available Datasheets
Part # | Manufacturer | Description | Datasheet |
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CO-142BNCX200-001 | Amphenol Cables on Demand | Amphenol CO-142BNCX200-001 BNC Male to BNC Male (RG142) 50 Ohm Coaxial Cable Assembly (High-Temp Teflon RG142B/U) 1ft | |
FO-DUALSTLC00-001 | Amphenol Cables on Demand | Amphenol FO-DUALSTLC00-001 ST-LC Duplex Multimode 62.5/125 Fiber Optic Patch Cable (OFNR Riser) - 2 x ST Male to 2 x LC Male 1m | |
CO-316SMAX200-001 | Amphenol Cables on Demand | Amphenol CO-316SMAX200-001 RG316 High Temperature Teflon Coaxial Cable - SMA Male to SMA Male 1ft |
Price & Stock for PJD4NA60_L2_00001
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
241-PJD4NA60L200001
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Mouser Electronics | MOSFETs 600V N-Channel MOSFET RoHS: Compliant | 0 |
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Part Details for PJD4NA60_L2_00001
PJD4NA60_L2_00001 CAD Models
PJD4NA60_L2_00001 Part Data Attributes
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PJD4NA60_L2_00001
PanJit Semiconductor
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Datasheet
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PJD4NA60_L2_00001
PanJit Semiconductor
Power Field-Effect Transistor, 4A I(D), 600V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252,
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | PANJIT INTERNATIONAL INC | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 217 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain Current-Max (ID) | 4 A | |
Drain-source On Resistance-Max | 2.4 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-252 | |
JESD-30 Code | R-PSSO-G2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 16 A | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for PJD4NA60_L2_00001
This table gives cross-reference parts and alternative options found for PJD4NA60_L2_00001. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of PJD4NA60_L2_00001, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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4N60L-T2Q-T | Power Field-Effect Transistor, 4A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE PACKAGE-3 | Unisonic Technologies Co Ltd | PJD4NA60_L2_00001 vs 4N60L-T2Q-T |
PJD4NA60_R2_00001 | Power Field-Effect Transistor, 4A I(D), 600V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3/2 | PanJit Semiconductor | PJD4NA60_L2_00001 vs PJD4NA60_R2_00001 |
FDP4N60NZ | Power Field-Effect Transistor, 3.8A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3 | Fairchild Semiconductor Corporation | PJD4NA60_L2_00001 vs FDP4N60NZ |
4N60G-TA3-T | Power Field-Effect Transistor, 4A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Unisonic Technologies Co Ltd | PJD4NA60_L2_00001 vs 4N60G-TA3-T |
4N60L-TN3-R | Power Field-Effect Transistor, 4A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, LEAD FREE PACKAGE-3 | Unisonic Technologies Co Ltd | PJD4NA60_L2_00001 vs 4N60L-TN3-R |
4N60G-TQ3-R | Power Field-Effect Transistor, 4A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE PACKAGE-3 | Unisonic Technologies Co Ltd | PJD4NA60_L2_00001 vs 4N60G-TQ3-R |
TSM4NB60CHC5G | Power Field-Effect Transistor, 4A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, IPAK-3 | Taiwan Semiconductor | PJD4NA60_L2_00001 vs TSM4NB60CHC5G |
4N60G-TN3-R | Power Field-Effect Transistor, 4A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, HALOGEN FREE PACKAGE-3 | Unisonic Technologies Co Ltd | PJD4NA60_L2_00001 vs 4N60G-TN3-R |
SMK0460I | 4A, 600V, 2.5ohm, N-CHANNEL, Si, POWER, MOSFET, IPAK-3 | Kodenshi Sensing | PJD4NA60_L2_00001 vs SMK0460I |
AOU4N60 | Power Field-Effect Transistor, 4A I(D), 600V, 2.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, GREEN PACKAGE-3 | Alpha & Omega Semiconductor | PJD4NA60_L2_00001 vs AOU4N60 |