Part Details for PJD50N10AL_L2_00001 by PanJit Semiconductor
Overview of PJD50N10AL_L2_00001 by PanJit Semiconductor
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for PJD50N10AL_L2_00001
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
241-PJD50N10ALL20000
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Mouser Electronics | MOSFET 100V N-Channel Enhancement Mode MOSFET RoHS: Compliant | 0 |
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$0.3370 | Order Now |
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NAC | MOS Function, TO Line, TO-252AA Package, 13in. Package Size RoHS: Compliant Min Qty: 12000 Package Multiple: 3000 | 0 |
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$0.3800 / $0.3900 | Buy Now |
DISTI #
PJD50N10AL_L2_00001
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Avnet Silica | (Alt: PJD50N10AL_L2_00001) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 3 Weeks, 6 Days | Silica - 0 |
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Buy Now |
Part Details for PJD50N10AL_L2_00001
PJD50N10AL_L2_00001 CAD Models
PJD50N10AL_L2_00001 Part Data Attributes:
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PJD50N10AL_L2_00001
PanJit Semiconductor
Buy Now
Datasheet
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PJD50N10AL_L2_00001
PanJit Semiconductor
Power Field-Effect Transistor
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | PANJIT INTERNATIONAL INC | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Additional Feature | ULTRA LOW RESISTANCE | |
Avalanche Energy Rating (Eas) | 63.4 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 6.3 A | |
Drain-source On Resistance-Max | 0.025 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-252AA | |
JESD-30 Code | R-PSSO-G2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 150 A | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Element Material | SILICON |