Part Details for PJD7NA60_L2_00001 by PanJit Semiconductor
Overview of PJD7NA60_L2_00001 by PanJit Semiconductor
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Renewable Energy
Price & Stock for PJD7NA60_L2_00001
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
241-PJD7NA60L200001
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Mouser Electronics | MOSFET 600V N-Channel MOSFET RoHS: Compliant | 0 |
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Part Details for PJD7NA60_L2_00001
PJD7NA60_L2_00001 CAD Models
PJD7NA60_L2_00001 Part Data Attributes
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PJD7NA60_L2_00001
PanJit Semiconductor
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Datasheet
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PJD7NA60_L2_00001
PanJit Semiconductor
Power Field-Effect Transistor, 7A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC PACKAGE-3/2
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | PANJIT INTERNATIONAL INC | |
| Package Description | GREEN, PLASTIC PACKAGE-3/2 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 489 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 7 A | |
| Drain-source On Resistance-Max | 1.2 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252AA | |
| JESD-30 Code | R-PSSO-G2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 28 A | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for PJD7NA60_L2_00001
This table gives cross-reference parts and alternative options found for PJD7NA60_L2_00001. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of PJD7NA60_L2_00001, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| 7N60L-TQ2-R-M | Power Field-Effect Transistor, 7.4A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, TO-263, 3 PIN | Unisonic Technologies Co Ltd | PJD7NA60_L2_00001 vs 7N60L-TQ2-R-M |
| 7N60AG-TA3-T | Power Field-Effect Transistor, 7A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE, TO-220, 3 PIN | Unisonic Technologies Co Ltd | PJD7NA60_L2_00001 vs 7N60AG-TA3-T |
| 7N65L-T2Q-T | Power Field-Effect Transistor, 7.4A I(D), 650V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, TO-262, 3 PIN | Unisonic Technologies Co Ltd | PJD7NA60_L2_00001 vs 7N65L-T2Q-T |
| PJD7NA60_R2_00001 | Power Field-Effect Transistor, 7A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, | PanJit Semiconductor | PJD7NA60_L2_00001 vs PJD7NA60_R2_00001 |
| SSP7N60BJ69Z | Power Field-Effect Transistor, 7A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220, 3 PIN | Fairchild Semiconductor Corporation | PJD7NA60_L2_00001 vs SSP7N60BJ69Z |
| 8N65G-T2Q-T | Power Field-Effect Transistor, 7.5A I(D), 650V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, HALOGEN FREE, TO-262, 3 PIN | Unisonic Technologies Co Ltd | PJD7NA60_L2_00001 vs 8N65G-T2Q-T |
| 7N65AL-TA3-T | Power Field-Effect Transistor, 7A I(D), 650V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220, 3 PIN | Unisonic Technologies Co Ltd | PJD7NA60_L2_00001 vs 7N65AL-TA3-T |
| 7N60G-TA3-T-Q | Power Field-Effect Transistor, 7.4A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE, TO-220, 3 PIN | Unisonic Technologies Co Ltd | PJD7NA60_L2_00001 vs 7N60G-TA3-T-Q |
| KF7N65P | Power Field-Effect Transistor, 7A I(D), 650V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | KEC | PJD7NA60_L2_00001 vs KF7N65P |
| 7N60G-T2Q-T-M | Power Field-Effect Transistor, 7.4A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, HALOGEN FREE, TO-262, 3 PIN | Unisonic Technologies Co Ltd | PJD7NA60_L2_00001 vs 7N60G-T2Q-T-M |