Datasheets
PJS6603_S1_00001 by: PanJit Semiconductor

Power Field-Effect Transistor, 4.4A I(D), 30V, 0.048ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-6

Part Details for PJS6603_S1_00001 by PanJit Semiconductor

Overview of PJS6603_S1_00001 by PanJit Semiconductor

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Applications Space Technology Aerospace and Defense Energy and Power Systems Medical Imaging Robotics and Drones

Price & Stock for PJS6603_S1_00001

Part # Distributor Description Stock Price Buy
DISTI # 241-PJS6603_S1_00001
Mouser Electronics MOSFET 30V Complementary Enhancement Mode MOSFET RoHS: Compliant 0
  • 3,000 $0.1690
$0.1690 Order Now
NAC 30V Complementary Enhancement Mode MOSFET RoHS: Compliant Min Qty: 1 Package Multiple: 3000 252000
  • 6,000 $0.1100
  • 12,000 $0.0990
$0.0990 / $0.1100 Buy Now
DISTI # PJS6603_S1_00001
Avnet Asia Transistor MOSFET Array N/P-CH 30V 6-Pin SOT-23 T/R (Alt: PJS6603_S1_00001) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 18 Weeks, 0 Days 0
  • 3,000 $0.1974
  • 6,000 $0.1948
  • 9,000 $0.1923
  • 15,000 $0.1899
  • 30,000 $0.1852
  • 75,000 $0.1807
  • 150,000 $0.1765
$0.1765 / $0.1974 Buy Now
DISTI # PJS6603_S1_00001
Avnet Silica Transistor MOSFET Array N/P-CH 30V 6-Pin SOT-23 T/R (Alt: PJS6603_S1_00001) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 3 Weeks, 6 Days Silica - 12000
Buy Now

Part Details for PJS6603_S1_00001

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PJS6603_S1_00001 Part Data Attributes

PJS6603_S1_00001 PanJit Semiconductor
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Compare Parts:
PJS6603_S1_00001 PanJit Semiconductor Power Field-Effect Transistor, 4.4A I(D), 30V, 0.048ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-6
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer PAN JIT INTERNATIONAL INC
Package Description GREEN, PLASTIC PACKAGE-6
Reach Compliance Code compliant
ECCN Code EAR99
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 4.4 A
Drain-source On Resistance-Max 0.048 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G6
Number of Elements 2
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Pulsed Drain Current-Max (IDM) 17.6 A
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for PJS6603_S1_00001

This table gives cross-reference parts and alternative options found for PJS6603_S1_00001. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of PJS6603_S1_00001, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
PJS6603_S2_00001 Power Field-Effect Transistor, 4.4A I(D), 30V, 0.048ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-6 PanJit Semiconductor PJS6603_S1_00001 vs PJS6603_S2_00001

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