Part Details for PJS6816_S1_00001 by PanJit Semiconductor
Overview of PJS6816_S1_00001 by PanJit Semiconductor
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Space Technology
Aerospace and Defense
Energy and Power Systems
Available Datasheets
Part # | Manufacturer | Description | Datasheet |
---|---|---|---|
CO-142BNCX200-001 | Amphenol Cables on Demand | Amphenol CO-142BNCX200-001 BNC Male to BNC Male (RG142) 50 Ohm Coaxial Cable Assembly (High-Temp Teflon RG142B/U) 1ft | |
FO-DUALSTLC00-001 | Amphenol Cables on Demand | Amphenol FO-DUALSTLC00-001 ST-LC Duplex Multimode 62.5/125 Fiber Optic Patch Cable (OFNR Riser) - 2 x ST Male to 2 x LC Male 1m | |
CO-316SMAX200-001 | Amphenol Cables on Demand | Amphenol CO-316SMAX200-001 RG316 High Temperature Teflon Coaxial Cable - SMA Male to SMA Male 1ft |
Price & Stock for PJS6816_S1_00001
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
241-PJS6816_S1_00001
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Mouser Electronics | MOSFETs 20V N-Channel Enhancement Mode MOSFET RoHS: Compliant | 0 |
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$0.1120 / $0.5200 | Order Now |
DISTI #
PJS6816-S1
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TME | Transistor: N-MOSFET x2, unipolar, 20V, 5.2A, Idm: 20.8A, 1.25W Min Qty: 1 | 0 |
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$0.1010 / $0.3340 | RFQ |
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NAC | 20V N-Channel Enhancement Mode MOSFET RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 | 0 |
|
RFQ | |
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Chip 1 Exchange | INSTOCK | 3434 |
|
RFQ |
Part Details for PJS6816_S1_00001
PJS6816_S1_00001 CAD Models
PJS6816_S1_00001 Part Data Attributes
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PJS6816_S1_00001
PanJit Semiconductor
Buy Now
Datasheet
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Compare Parts:
PJS6816_S1_00001
PanJit Semiconductor
Power Field-Effect Transistor, 5.2A I(D), 20V, 0.029ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-6
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | PANJIT INTERNATIONAL INC | |
Package Description | GREEN, PLASTIC PACKAGE-6 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 20 V | |
Drain Current-Max (ID) | 5.2 A | |
Drain-source On Resistance-Max | 0.029 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G6 | |
Number of Elements | 2 | |
Number of Terminals | 6 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 20.8 A | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |