Datasheets
PJU4NA65_T0_00001 by:

Power Field-Effect Transistor, 4A I(D), 650V, 2.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AB,

Part Details for PJU4NA65_T0_00001 by PanJit Semiconductor

Overview of PJU4NA65_T0_00001 by PanJit Semiconductor

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Applications Environmental Monitoring Space Technology Internet of Things (IoT) Industrial Automation Financial Technology (Fintech) Smart Cities Transportation and Logistics Energy and Power Systems Agriculture Technology Medical Imaging Virtual Reality (VR), Augmented Reality (AR), and Vision Systems Automotive Education and Research Consumer Electronics Security and Surveillance Audio and Video Systems Computing and Data Storage Aerospace and Defense Healthcare Renewable Energy Electronic Manufacturing Communication and Networking Robotics and Drones

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Part # Manufacturer Description Datasheet
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Part Details for PJU4NA65_T0_00001

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PJU4NA65_T0_00001 Part Data Attributes

PJU4NA65_T0_00001 PanJit Semiconductor
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PJU4NA65_T0_00001 PanJit Semiconductor Power Field-Effect Transistor, 4A I(D), 650V, 2.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AB,
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer PANJIT INTERNATIONAL INC
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer PANJIT
Avalanche Energy Rating (Eas) 202 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 650 V
Drain Current-Max (ID) 4 A
Drain-source On Resistance-Max 2.7 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-251AB
JESD-30 Code R-PSIP-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 16 A
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for PJU4NA65_T0_00001

This table gives cross-reference parts and alternative options found for PJU4NA65_T0_00001. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of PJU4NA65_T0_00001, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SMK0465IS Power Field-Effect Transistor, 4A I(D), 650V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, IPAK-3 Kodenshi Corporation PJU4NA65_T0_00001 vs SMK0465IS
AP04N60H-H-HF TRANSISTOR POWER, FET, FET General Purpose Power Advanced Power Electronics Corp PJU4NA65_T0_00001 vs AP04N60H-H-HF

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