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Power Field-Effect Transistor
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
PJW4P06A_R2_00001 by PanJit Semiconductor is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Manufacturer | Description | Datasheet |
---|---|---|---|
CO-142BNCX200-001 | Amphenol Cables on Demand | Amphenol CO-142BNCX200-001 BNC Male to BNC Male (RG142) 50 Ohm Coaxial Cable Assembly (High-Temp Teflon RG142B/U) 1ft | |
FO-DUALSTLC00-001 | Amphenol Cables on Demand | Amphenol FO-DUALSTLC00-001 ST-LC Duplex Multimode 62.5/125 Fiber Optic Patch Cable (OFNR Riser) - 2 x ST Male to 2 x LC Male 1m | |
CO-316SMAX200-001 | Amphenol Cables on Demand | Amphenol CO-316SMAX200-001 RG316 High Temperature Teflon Coaxial Cable - SMA Male to SMA Male 1ft |
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
PJW4P06A-R2
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TME | Transistor: P-MOSFET, unipolar, -60V, -4A, Idm: -16A, 3.1W, SOT223 Min Qty: 1 | 704 |
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$0.1540 / $0.3900 | Buy Now |
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NAC | 60V P-Channel Enhancement Mode MOSFET RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Container: Reel | 0 |
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$0.1010 / $0.1180 | Buy Now |
DISTI #
PJW4P06A_R2_00001
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Avnet Silica | Power MOSFET P Channel 60 V 4 A 110 Milliohms SOT223 4 Pins Surface Mount (Alt: PJW4P06A_R2_00001) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 32 Weeks, 0 Days | Silica - 0 |
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Buy Now |
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PJW4P06A_R2_00001
PanJit Semiconductor
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Datasheet
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PJW4P06A_R2_00001
PanJit Semiconductor
Power Field-Effect Transistor
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | PANJIT INTERNATIONAL INC | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | PANJIT | |
Avalanche Energy Rating (Eas) | 12.8 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 4 A | |
Drain-source On Resistance-Max | 0.11 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G4 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | P-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 16 A | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |