Part Details for PMDXB550UNE by Nexperia
Overview of PMDXB550UNE by Nexperia
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Applications
Education and Research
Aerospace and Defense
Agriculture Technology
Robotics and Drones
Part Details for PMDXB550UNE
PMDXB550UNE CAD Models
PMDXB550UNE Part Data Attributes
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PMDXB550UNE
Nexperia
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Datasheet
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PMDXB550UNE
Nexperia
Small Signal Field-Effect Transistor
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | NEXPERIA | |
Package Description | DFN1010B-6, 6 PIN | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Date Of Intro | 2017-02-17 | |
Samacsys Manufacturer | Nexperia | |
Case Connection | DRAIN | |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 0.59 A | |
Drain-source On Resistance-Max | 0.9 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-N6 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 2 | |
Number of Terminals | 6 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Reference Standard | IEC-60134 | |
Surface Mount | YES | |
Terminal Finish | TIN | |
Terminal Form | NO LEAD | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |