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Transistors / Small Signal Field-Effect Transistors / PMGD175XNEX
Datasheets
PMGD175XNEX by: Nexperia

PMGD175XNE - 30 V, Dual N-channel Trench MOSFET@en-us TSSOP 6-Pin

Part Details for PMGD175XNEX by Nexperia

Results Overview of PMGD175XNEX by Nexperia

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PMGD175XNEX Information

PMGD175XNEX by Nexperia is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for PMGD175XNEX

Part # Distributor Description Stock Price Buy
DISTI # 74AH1151
Newark Mosfet, Dual N-Ch, 30V, 0.87A, Tssop Rohs Compliant: Yes |Nexperia PMGD175XNEX RoHS: Compliant Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape 1500
  • 1 $0.4370
  • 10 $0.3410
  • 25 $0.2950
  • 50 $0.2500
  • 100 $0.2040
  • 250 $0.1970
  • 500 $0.1890
  • 1,000 $0.1280
$0.1280 / $0.4370 Buy Now
DISTI # 86AK5946
Newark Mosfet, N-Ch, 30V, 0.87A, Tssop Rohs Compliant: Yes |Nexperia PMGD175XNEX RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 1 Container: Reel 0
  • 3,000 $0.1160
  • 6,000 $0.1130
  • 12,000 $0.1020
  • 18,000 $0.1010
  • 30,000 $0.1000
$0.1000 / $0.1160 Buy Now
DISTI # PMGD175XNEX
Avnet Americas Trans MOSFET Array Dual N-CH 30V 0.95A 6-Pin SOT-363 T/R - Tape and Reel (Alt: PMGD175XNEX) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 6 Weeks, 0 Days Container: Reel 0
  • 9,000 $0.1028
  • 15,000 $0.1028
  • 24,000 $0.0939
  • 45,000 $0.0931
  • 90,000 $0.0924
$0.0924 / $0.1028 Buy Now
DISTI # PMGD175XNEX
TME Transistor: N-MOSFET, unipolar, 30V, 500mA, Idm: 4A, ESD Min Qty: 1 0
  • 1 $0.3890
  • 10 $0.2980
  • 50 $0.2130
  • 100 $0.1760
  • 250 $0.1540
  • 500 $0.1390
  • 1,000 $0.1290
  • 3,000 $0.1200
$0.1200 / $0.3890 RFQ
DISTI # PMGD175XNEX
Avnet Asia Trans MOSFET Array Dual N-CH 30V 0.95A 6-Pin SOT-363 T/R (Alt: PMGD175XNEX) RoHS: Compliant Min Qty: 9000 Package Multiple: 3000 Lead time: 6 Weeks, 0 Days 0
  • 9,000 $0.0950
  • 18,000 $0.0938
  • 27,000 $0.0926
  • 45,000 $0.0914
  • 90,000 $0.0891
  • 225,000 $0.0870
  • 450,000 $0.0849
$0.0849 / $0.0950 Buy Now
DISTI # PMGD175XNEX
Avnet Silica Trans MOSFET Array Dual N-CH 30V 0.95A 6-Pin SOT-363 T/R (Alt: PMGD175XNEX) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 8 Weeks, 0 Days Silica - 6000
Buy Now
DISTI # C1S548200033201
Chip1Stop MOSFET RoHS: Compliant pbFree: Yes Container: Cut Tape 2291
  • 5 $0.4310
  • 50 $0.2670
  • 100 $0.1550
  • 200 $0.1440
  • 500 $0.1260
  • 1,000 $0.1040
  • 2,000 $0.0986
$0.0986 / $0.4310 Buy Now
DISTI # PMGD175XNEX
EBV Elektronik Trans MOSFET Array Dual N-CH 30V 0.95A 6-Pin SOT-363 T/R (Alt: PMGD175XNEX) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 8 Weeks, 0 Days EBV - 0
Buy Now
LCSC 30V 0.95A 310mW 211m4.5V0.9A 750mV250uA 2 N-Channel SC-70-6(SOT-363) MOSFETs ROHS 10
  • 1 $0.4721
  • 10 $0.4626
  • 30 $0.4548
  • 100 $0.4485
$0.4485 / $0.4721 Buy Now
New Advantage Corporation Small Signal Field-Effect Transistor, 0.87AI(D),30V, 2-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET RoHS: Compliant Min Qty: 1 Package Multiple: 3000 6000
  • 3,000 $0.1163
  • 6,000 $0.1085
$0.1085 / $0.1163 Buy Now

Part Details for PMGD175XNEX

PMGD175XNEX Part Data Attributes

Parametric Data
PMGD175XNEX Nexperia
Buy Now Datasheet
Compare Parts:
PMGD175XNEX Nexperia PMGD175XNE - 30 V, Dual N-channel Trench MOSFET@en-us TSSOP 6-Pin
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer NEXPERIA
Part Package Code TSSOP
Package Description SC-88, TSSOP-6,6 PIN
Pin Count 6
Manufacturer Package Code SOT363
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 6 Weeks
Samacsys Manufacturer Nexperia
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 0.87 A
Drain-source On Resistance-Max 0.252 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G6
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Reference Standard IEC-60134
Surface Mount YES
Terminal Finish TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for PMGD175XNEX

This table gives cross-reference parts and alternative options found for PMGD175XNEX. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of PMGD175XNEX, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
DMN3401LDW-7 Diodes Incorporated $0.0858 Small Signal Field-Effect Transistor, PMGD175XNEX vs DMN3401LDW-7

PMGD175XNEX Related Parts

PMGD175XNEX Frequently Asked Questions (FAQ)

  • A thermal pad on the bottom of the package should be connected to a large copper area on the PCB to dissipate heat efficiently. A minimum of 2 oz copper thickness is recommended.

  • Ensure that the device is operated within the recommended junction temperature range (TJ) of -40°C to 150°C. Also, consider the power derating curve to avoid overheating.

  • The maximum allowed voltage on the gate pin is ±20 V, but it's recommended to keep it within ±15 V to ensure reliable operation.

  • Yes, the PMGD175XNEX is suitable for high-frequency switching applications up to 100 kHz. However, ensure that the device is properly cooled and the PCB layout is optimized for high-frequency operation.

  • Handle the device by the body or use an ESD wrist strap to prevent ESD damage. Also, ensure that the PCB has adequate ESD protection measures, such as TVS diodes or ESD protection arrays.

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