-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Part Details for PMV45EN2R by Nexperia
Results Overview of PMV45EN2R by Nexperia
- Distributor Offerings: (16 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
PMV45EN2R Information
PMV45EN2R by Nexperia is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for PMV45EN2R
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
44AC2810
|
Newark | Mosfet, N-Ch, 10V, 5.1A, Sot-323, Channel Type:N Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:5.1A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1.5V Rohs Compliant: Yes |Nexperia PMV45EN2R RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 1489 |
|
$0.1660 / $0.4330 | Buy Now |
|
DISTI #
23AC9005
|
Newark | Pmv45En2/Sot23/To-236Ab Rohs Compliant: Yes |Nexperia PMV45EN2R RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
|
$0.1130 / $0.1290 | Buy Now |
|
DISTI #
86AK5982
|
Newark | Mosfet, N-Ch, 30V, 5.1A, Sot-23 Rohs Compliant: Yes |Nexperia PMV45EN2R RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
|
$0.1250 | Buy Now |
|
DISTI #
PMV45EN2R
|
Avnet Americas | Power MOSFET, N Channel, 30 V, 5.1 A, 0.035 ohm, SOT-23, Surface Mount - Tape and Reel (Alt: PMV45EN2R) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 8 Weeks, 0 Days Container: Reel | 9000 |
|
$0.0555 / $0.0566 | Buy Now |
|
|
Rochester Electronics | PMV45EN2R - Small Signal Field-Effect Transistor, 4.1A, 30V, N-Channel MOSFET, TO-236AB RoHS: Compliant Status: Active Min Qty: 1 | 98480 |
|
$0.0572 / $0.0923 | Buy Now |
|
|
Future Electronics | PMV45EN2R Series 30 V 5000 mW 6.3 nC SMT N-Channel TrenchMOS FET - SOT-23 Min Qty: 3000 Package Multiple: 3000 |
201000 null |
|
$0.0544 / $0.0587 | Buy Now |
|
|
Future Electronics | PMV45EN2R Series 30 V 5000 mW 6.3 nC SMT N-Channel TrenchMOS FET - SOT-23 Min Qty: 3000 Package Multiple: 3000 |
522000 null |
|
$0.0544 / $0.0587 | Buy Now |
|
DISTI #
PMV45EN2R
|
TME | Transistor: N-MOSFET, unipolar, 30V, 2.6A, 1115mW, SOT23,TO236AB Min Qty: 1 | 4712 |
|
$0.0760 / $0.3610 | Buy Now |
|
DISTI #
PMV45EN2R
|
Avnet Asia | Power MOSFET, N Channel, 30 V, 5.1 A, 0.035 ohm, SOT-23, Surface Mount (Alt: PMV45EN2R) RoHS: Compliant Min Qty: 12000 Package Multiple: 3000 Lead time: 12 Weeks, 0 Days | 0 |
|
$0.0742 / $0.0830 | Buy Now |
|
DISTI #
PMV45EN2R
|
Avnet Silica | Power MOSFET N Channel 30 V 51 A 0035 ohm SOT23 Surface Mount (Alt: PMV45EN2R) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 10 Weeks, 0 Days | Silica - 453000 |
|
Buy Now |
Part Details for PMV45EN2R
PMV45EN2R CAD Models
PMV45EN2R Part Data Attributes
|
|
PMV45EN2R
Nexperia
Buy Now
Datasheet
|
Compare Parts:
PMV45EN2R
Nexperia
PMV45EN2 - 30 V, N-channel Trench MOSFET@en-us TO-236 3-Pin
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | NEXPERIA | |
| Part Package Code | TO-236 | |
| Package Description | PLASTIC PACKAGE-3 | |
| Pin Count | 3 | |
| Manufacturer Package Code | SOT23 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 8 Weeks | |
| Samacsys Manufacturer | Nexperia | |
| Additional Feature | LOGIC LEVEL COMPATIBLE | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 4.1 A | |
| Drain-source On Resistance-Max | 0.042 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-236AB | |
| JESD-30 Code | R-PDSO-G3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Reference Standard | IEC-60134 | |
| Surface Mount | YES | |
| Terminal Finish | TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
PMV45EN2R Frequently Asked Questions (FAQ)
-
A recommended PCB layout for optimal thermal performance of PMV45EN2R includes a thermal pad connected to a large copper area on the PCB, with multiple vias to dissipate heat efficiently.
-
To ensure reliability in high-temperature applications, ensure that the PMV45EN2R is operated within its recommended temperature range, and consider using a heat sink or thermal interface material to reduce thermal resistance.
-
The PMV45EN2R has built-in ESD protection, but it's still important to follow proper ESD handling procedures during assembly and handling to prevent damage.
-
Yes, the PMV45EN2R is suitable for high-frequency switching applications due to its low RDS(on) and low gate charge, but ensure that the PCB layout and component selection are optimized for high-frequency operation.
-
The gate resistor value for PMV45EN2R depends on the specific application requirements, but a general guideline is to choose a value between 10 ohms and 100 ohms to balance switching speed and EMI considerations.