There are no models available for this part yet.
Overview of PN2907 by National Semiconductor Corporation
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 4 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 0 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Consumer Electronics
Audio and Video Systems
Price & Stock for PN2907 by National Semiconductor Corporation
| Part # | Manufacturer | Description | Stock | Price | Buy | ||
|---|---|---|---|---|---|---|---|
| Bristol Electronics | 1924 |
|
RFQ | ||||
| Bristol Electronics | 200 |
|
RFQ | ||||
| Quest Components | Bipolar Junction Transistor, PNP Type, TO-92 | 1047 |
|
$0.0450 / $0.1000 | Buy Now | ||
| Quest Components | Bipolar Junction Transistor, PNP Type, TO-92 | 536 |
|
$0.0750 / $0.2500 | Buy Now |
CAD Models for PN2907 by National Semiconductor Corporation
Part Data Attributes for PN2907 by National Semiconductor Corporation
|
|
|
|---|---|
|
Rohs Code
|
No
|
|
Part Life Cycle Code
|
Transferred
|
|
Ihs Manufacturer
|
NATIONAL SEMICONDUCTOR CORP
|
|
Reach Compliance Code
|
unknown
|
|
ECCN Code
|
EAR99
|
|
Additional Feature
|
HIGH SPEED SATURATED SWITCHING
|
|
Collector Current-Max (IC)
|
0.5 A
|
|
Collector-Base Capacitance-Max
|
8 pF
|
|
Collector-Emitter Voltage-Max
|
30 V
|
|
Configuration
|
SINGLE
|
|
DC Current Gain-Min (hFE)
|
30
|
|
JEDEC-95 Code
|
TO-92
|
|
JESD-30 Code
|
O-PBCY-T3
|
|
JESD-609 Code
|
e0
|
|
Number of Elements
|
1
|
|
Number of Terminals
|
3
|
|
Operating Temperature-Max
|
150 °C
|
|
Package Body Material
|
PLASTIC/EPOXY
|
|
Package Shape
|
ROUND
|
|
Package Style
|
CYLINDRICAL
|
|
Polarity/Channel Type
|
PNP
|
|
Power Dissipation-Max (Abs)
|
0.625 W
|
|
Qualification Status
|
Not Qualified
|
|
Surface Mount
|
NO
|
|
Terminal Finish
|
Tin/Lead (Sn/Pb)
|
|
Terminal Form
|
THROUGH-HOLE
|
|
Terminal Position
|
BOTTOM
|
|
Transistor Application
|
SWITCHING
|
|
Transistor Element Material
|
SILICON
|
|
Transition Frequency-Nom (fT)
|
200 MHz
|
|
Turn-off Time-Max (toff)
|
100 ns
|
|
Turn-on Time-Max (ton)
|
45 ns
|
|
VCEsat-Max
|
0.4 V
|
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