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Transistors / Power Field-Effect Transistors / PSMN013-80YS,115
Datasheets
PSMN013-80YS,115 by:

PSMN013-80YS - N-channel LFPAK 80 V 12.9 mΩ standard level MOSFET@en-us SOIC 4-Pin

Part Details for PSMN013-80YS,115 by Nexperia

Overview of PSMN013-80YS,115 by Nexperia

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for PSMN013-80YS,115

Part # Distributor Description Stock Price Buy
DISTI # 29AK4074
Newark Mosfet Rohs Compliant: Yes |Nexperia PSMN013-80YS,115 RoHS: Compliant Min Qty: 1500 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 1,500 $0.5290
$0.5290 Buy Now
DISTI # 1727-4279-1-ND
DigiKey MOSFET N-CH 80V 60A LFPAK56 Min Qty: 1 Lead time: 6 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) 8387
In Stock
  • 1 $1.6500
  • 10 $1.0460
  • 100 $0.7001
  • 500 $0.5513
  • 1,500 $0.4071
  • 3,000 $0.4049
$0.4049 / $1.6500 Buy Now
DISTI # PSMN013-80YS,115
Avnet Americas Trans MOSFET N-CH 80V 60A 5-Pin(4+Tab) LFPAK T/R - Tape and Reel (Alt: PSMN013-80YS,115) RoHS: Compliant Min Qty: 3000 Package Multiple: 1500 Lead time: 6 Weeks, 0 Days Container: Reel 0
  • 3,000 $0.3467
$0.3467 Buy Now
DISTI # 771-PSMN013-80YS,115
Mouser Electronics MOSFETs PSMN013-80YS/SOT669/LFPAK RoHS: Compliant 460
  • 1 $1.0500
  • 10 $0.8460
  • 100 $0.6520
  • 500 $0.5530
  • 1,000 $0.4840
  • 1,500 $0.4110
  • 3,000 $0.4050
  • 9,000 $0.4040
$0.4040 / $1.0500 Buy Now
Future Electronics N-Channel 80 V 60 A 12.9 mOhm 148 mW SMT Standard Level Mosfet - LFPAK56 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 1500 Lead time: 13 Weeks 0
  • 3,000 $0.3930
$0.3930 Buy Now
DISTI # PSMN013-80YS.115
TME Transistor: N-MOSFET, unipolar, 80V, 60A, Idm: 233A, 106W Min Qty: 1 0
  • 1 $0.8840
  • 5 $0.7970
  • 25 $0.7020
  • 100 $0.6320
  • 500 $0.5890
$0.5890 / $0.8840 RFQ
DISTI # PSMN013-80YS,115
Avnet Asia Trans MOSFET N-CH 80V 60A 5-Pin(4+Tab) LFPAK T/R (Alt: PSMN013-80YS,115) RoHS: Compliant Min Qty: 3000 Package Multiple: 1500 Lead time: 6 Weeks, 0 Days 3000
  • 3,000 $0.2835
  • 6,000 $0.2686
$0.2686 / $0.2835 Buy Now
DISTI # PSMN013-80YS,115
Avnet Silica Trans MOSFET N-CH 80V 60A 5-Pin(4+Tab) LFPAK T/R (Alt: PSMN013-80YS,115) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 8 Weeks, 0 Days Silica - 0
Buy Now
DISTI # PSMN013-80YS,115
EBV Elektronik Trans MOSFET N-CH 80V 60A 5-Pin(4+Tab) LFPAK T/R (Alt: PSMN013-80YS,115) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 8 Weeks, 0 Days EBV - 0
Buy Now
New Advantage Corporation Power Field-Effect Transistor,60AI(D),80V,0.00129ohm,1-Element,N-Channel,Silicon,Metal-oxideSemiconductor FET,MO-235 RoHS: Compliant Min Qty: 1 Package Multiple: 1500 3000
  • 1,500 $0.5214
  • 3,000 $0.4867
$0.4867 / $0.5214 Buy Now

Part Details for PSMN013-80YS,115

PSMN013-80YS,115 CAD Models

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PSMN013-80YS,115 Part Data Attributes

Parametric Data
PSMN013-80YS,115 Nexperia
Buy Now Datasheet
Compare Parts:
PSMN013-80YS,115 Nexperia PSMN013-80YS - N-channel LFPAK 80 V 12.9 mΩ standard level MOSFET@en-us SOIC 4-Pin
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer NEXPERIA
Part Package Code SOIC
Package Description LFPAK-4
Pin Count 4
Manufacturer Package Code SOT669
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer Nexperia
Avalanche Energy Rating (Eas) 70 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 80 V
Drain Current-Max (ID) 60 A
Drain-source On Resistance-Max 0.00129 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code MO-235
JESD-30 Code R-PSSO-G4
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 233 A
Surface Mount YES
Terminal Finish TIN
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

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