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PSMN027-100BS - N-channel 100V 26.8 mΩ standard level MOSFET in D2PAK.@en-us D2PAK 3-Pin
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Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
29AK4076
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Newark | Mosfet Rohs Compliant: Yes |Nexperia PSMN027-100BS,118 Min Qty: 4800 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
|
$0.5080 / $0.6600 | Buy Now |
DISTI #
PSMN027-100BS.118
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TME | Transistor: N-MOSFET, unipolar, 100V, 37A, Idm: 148A, 103W Min Qty: 1 | 0 |
|
$0.7100 / $1.0700 | RFQ |
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Chip1Cloud | MOSFET N-CH 100V 37A D2PAK | 9000 |
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RFQ | |
DISTI #
3940807
|
Farnell | MOSFET RoHS: Compliant Min Qty: 4800 Lead time: 28 Weeks, 1 Days Container: Reel | 0 |
|
$1.1243 | Buy Now |
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PSMN027-100BS,118
Nexperia
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Datasheet
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PSMN027-100BS,118
Nexperia
PSMN027-100BS - N-channel 100V 26.8 mΩ standard level MOSFET in D2PAK.@en-us D2PAK 3-Pin
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Part Life Cycle Code | Active | |
Ihs Manufacturer | NEXPERIA | |
Part Package Code | D2PAK | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Pin Count | 3 | |
Manufacturer Package Code | SOT404 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Nexperia | |
Avalanche Energy Rating (Eas) | 59 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 37 A | |
Drain-source On Resistance-Max | 0.0268 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 245 | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 148 A | |
Surface Mount | YES | |
Terminal Finish | TIN | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |