Datasheets
PSMN063-150D by:

TRANSISTOR 29 A, 150 V, 0.063 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, PLASTIC, SC-63, TO-252, DPAK-3, FET General Purpose Power

Part Details for PSMN063-150D by NXP Semiconductors

Overview of PSMN063-150D by NXP Semiconductors

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Price & Stock for PSMN063-150D

Part # Distributor Description Stock Price Buy
Bristol Electronics   Min Qty: 3 1765
  • 3 $1.8750
  • 12 $1.2188
  • 43 $0.7031
  • 144 $0.6000
  • 310 $0.5250
  • 735 $0.4875
$0.4875 / $1.8750 Buy Now
Quest Components TRANSISTOR,MOSFET,N-CHANNEL,150V V(BR)DSS,29A I(D),TO-252AA 1412
  • 1 $2.5000
  • 268 $0.6500
  • 1,232 $0.6250
$0.6250 / $2.5000 Buy Now

Part Details for PSMN063-150D

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PSMN063-150D Part Data Attributes

PSMN063-150D NXP Semiconductors
Buy Now Datasheet
Compare Parts:
PSMN063-150D NXP Semiconductors TRANSISTOR 29 A, 150 V, 0.063 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, PLASTIC, SC-63, TO-252, DPAK-3, FET General Purpose Power
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer NXP SEMICONDUCTORS
Part Package Code TO-252AA
Package Description PLASTIC, SC-63, TO-252, DPAK-3
Pin Count 3
Reach Compliance Code not_compliant
ECCN Code EAR99
Avalanche Energy Rating (Eas) 502 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 150 V
Drain Current-Max (ID) 29 A
Drain-source On Resistance-Max 0.063 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252AA
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 150 W
Pulsed Drain Current-Max (IDM) 116 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for PSMN063-150D

This table gives cross-reference parts and alternative options found for PSMN063-150D. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of PSMN063-150D, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
PSMN063-150D/T3 Power Field-Effect Transistor Nexperia PSMN063-150D vs PSMN063-150D/T3
934055758118 TRANSISTOR 29 A, 150 V, 0.063 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, DPAK-3, FET General Purpose Power NXP Semiconductors PSMN063-150D vs 934055758118
PSMN063-150D,118 PSMN063-150D - N-channel TrenchMOS SiliconMAX standard level FET DPAK 3-Pin NXP Semiconductors PSMN063-150D vs PSMN063-150D,118
PSMN063-150D/T3 TRANSISTOR 29 A, 150 V, 0.063 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, PLASTIC, SC-63, TO-252, DPAK-3, FET General Purpose Power NXP Semiconductors PSMN063-150D vs PSMN063-150D/T3
PSMN063-150D Power Field-Effect Transistor Nexperia PSMN063-150D vs PSMN063-150D
Part Number Description Manufacturer Compare
IRFR13N15DTRPBF Power Field-Effect Transistor, 14A I(D), 150V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 International Rectifier PSMN063-150D vs IRFR13N15DTRPBF
PSMN063-150D/T3 Power Field-Effect Transistor Nexperia PSMN063-150D vs PSMN063-150D/T3
IRFR13N15DPBF Power Field-Effect Transistor, 14A I(D), 150V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 International Rectifier PSMN063-150D vs IRFR13N15DPBF
PSMN063-150D Power Field-Effect Transistor Nexperia PSMN063-150D vs PSMN063-150D
IRFR13N15DTRPBF Power Field-Effect Transistor, 14A I(D), 150V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 Infineon Technologies AG PSMN063-150D vs IRFR13N15DTRPBF
PSMN063-150D,118 PSMN063-150D - N-channel TrenchMOS SiliconMAX standard level FET DPAK 3-Pin NXP Semiconductors PSMN063-150D vs PSMN063-150D,118
IRFR13N15DTRRP Power Field-Effect Transistor, 14A I(D), 150V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 International Rectifier PSMN063-150D vs IRFR13N15DTRRP
IRFR13N15DTR Power Field-Effect Transistor, 14A I(D), 150V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3 International Rectifier PSMN063-150D vs IRFR13N15DTR
IRFR13N15D Power Field-Effect Transistor, 14A I(D), 150V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3 Infineon Technologies AG PSMN063-150D vs IRFR13N15D
IRFR13N15DTRL Power Field-Effect Transistor, 14A I(D), 150V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3 International Rectifier PSMN063-150D vs IRFR13N15DTRL

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