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Transistors / Power Field-Effect Transistors / PSMN0R9-25YLC,115
Datasheets
PSMN0R9-25YLC,115 by:

PSMN0R9-25YLC - N-channel 25 V 0.99 mΩ logic level MOSFET in LFPAK using NextPower technology@en-us SOIC 4-Pin

Part Details for PSMN0R9-25YLC,115 by Nexperia

Results Overview of PSMN0R9-25YLC,115 by Nexperia

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PSMN0R9-25YLC,115 Information

PSMN0R9-25YLC,115 by Nexperia is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for PSMN0R9-25YLC,115

Part # Distributor Description Stock Price Buy
DISTI # 55T6965
Newark Mosfet, N-Ch, 25V, 100A, Sot-669, Channel Type:N Channel, Drain Source Voltage Vds:25V, Continuous Drain Current Id:100A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1.41V Rohs Compliant: Yes |Nexperia PSMN0R9-25YLC,115 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape 14053
  • 1 $1.7200
  • 10 $1.4800
  • 25 $1.3900
  • 50 $1.3000
  • 100 $1.2200
  • 250 $1.2100
  • 500 $0.9730
  • 1,000 $0.9630
$0.9630 / $1.7200 Buy Now
DISTI # 86AK6000
Newark Mosfet, N-Ch, 25V, 100A, Sot-669 Rohs Compliant: Yes |Nexperia PSMN0R9-25YLC,115 RoHS: Compliant Min Qty: 1500 Package Multiple: 1 Date Code: 1 Container: Reel 0
  • 1,500 $0.9240
  • 3,000 $0.9000
  • 6,000 $0.8830
  • 9,000 $0.8650
  • 15,000 $0.8370
$0.8370 / $0.9240 Buy Now
DISTI # PSMN0R9-25YLC,115
Avnet Americas Trans MOSFET N-CH 25V 100A 5-Pin(4+Tab) LFPAK T/R - Tape and Reel (Alt: PSMN0R9-25YLC,115) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 13 Weeks, 0 Days Container: Reel 0
  • 1,500 $0.7422
  • 3,000 $0.7366
  • 6,000 $0.7310
  • 9,000 $0.7254
  • 12,000 $0.7197
$0.7197 / $0.7422 Buy Now
Rochester Electronics PSMN0R9-25YLC - N-channel 25 V 0.99 mOhm logic level MOSFET in LFPAK using NextPower technology RoHS: Compliant Status: Active Min Qty: 1 91500
  • 1 $0.7029
  • 25 $0.6888
  • 100 $0.6607
  • 500 $0.6326
  • 1,000 $0.5975
$0.5975 / $0.7029 Buy Now
DISTI # PSMN0R9-25YLC.115
TME Transistor: N-MOSFET, unipolar, 25V, 100A, 272W Min Qty: 1 1245
  • 1 $1.4700
  • 10 $1.3200
  • 100 $1.2300
  • 250 $1.1600
  • 500 $1.0500
  • 1,000 $0.9700
  • 1,500 $0.9100
$0.9100 / $1.4700 Buy Now
DISTI # PSMN0R9-25YLC,115
Avnet Asia Trans MOSFET N-CH 25V 100A 5-Pin(4+Tab) LFPAK T/R (Alt: PSMN0R9-25YLC,115) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 13 Weeks, 0 Days 7500
  • 1,500 $0.8809
  • 3,000 $0.8694
  • 4,500 $0.8583
  • 7,500 $0.8474
  • 15,000 $0.8265
  • 37,500 $0.8066
  • 75,000 $0.7876
$0.7876 / $0.8809 Buy Now
DISTI # PSMN0R9-25YLC,115
Avnet Silica Trans MOSFET N-CH 25V 100A 5-Pin(4+Tab) LFPAK T/R (Alt: PSMN0R9-25YLC,115) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 15 Weeks, 0 Days Silica - 0
Buy Now
DISTI # PSMN0R9-25YLC,115
EBV Elektronik Trans MOSFET N-CH 25V 100A 5-Pin(4+Tab) LFPAK T/R (Alt: PSMN0R9-25YLC,115) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 15 Weeks, 0 Days EBV - 0
Buy Now
New Advantage Corporation PSMN0R9 Series 25 V 1.25 mOhm 51 nC SMT N-Channel Logic Level MOSFET - LFPAK-56 RoHS: Compliant Min Qty: 1 Package Multiple: 1500 6000
  • 1,500 $0.9643
  • 6,000 $0.9000
$0.9000 / $0.9643 Buy Now

Part Details for PSMN0R9-25YLC,115

PSMN0R9-25YLC,115 CAD Models

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PSMN0R9-25YLC,115 Part Data Attributes

Parametric Data
PSMN0R9-25YLC,115 Nexperia
Buy Now Datasheet
Compare Parts:
PSMN0R9-25YLC,115 Nexperia PSMN0R9-25YLC - N-channel 25 V 0.99 mΩ logic level MOSFET in LFPAK using NextPower technology@en-us SOIC 4-Pin
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer NEXPERIA
Part Package Code SOIC
Package Description SO-8, LFPAK-4
Pin Count 4
Manufacturer Package Code SOT669
Reach Compliance Code not_compliant
ECCN Code EAR99
Date Of Intro 2017-02-01
Samacsys Manufacturer Nexperia
Additional Feature HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Avalanche Energy Rating (Eas) 342 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 25 V
Drain Current-Max (ID) 100 A
Drain-source On Resistance-Max 0.00125 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G4
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 1563 A
Surface Mount YES
Terminal Finish TIN
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

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