Datasheets
PSMN0R9-25YLDX by: Nexperia

PSMN0R9-25YLD - N-channel 25 V, 0.85 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3tttTechnology@en-us SOIC 4-Pin

Part Details for PSMN0R9-25YLDX by Nexperia

Results Overview of PSMN0R9-25YLDX by Nexperia

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

PSMN0R9-25YLDX Information

PSMN0R9-25YLDX by Nexperia is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for PSMN0R9-25YLDX

Part # Distributor Description Stock Price Buy
DISTI # 84Y6414
Newark Mosfet, N-Ch, 25V, 300A, Sot-669-4, Transistor Polarity:N Channel, Continuous Drain Current Id:300A, Drain Source Voltage Vds:25V, On Resistance Rds(On):720Μohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:1.73V, Power Rohs Compliant: Yes |Nexperia PSMN0R9-25YLDX RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape 0
  • 1 $1.6500
  • 10 $1.3900
  • 25 $1.3000
  • 50 $1.2000
  • 100 $1.1000
  • 250 $1.0400
  • 500 $0.9330
  • 1,000 $0.7910
$0.7910 / $1.6500 Buy Now
DISTI # PSMN0R9-25YLDX
Avnet Americas Transistor MOSFET N-CH 25V 300A 4-Pin SOT-669 T/R - Tape and Reel (Alt: PSMN0R9-25YLDX) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 10 Weeks, 0 Days Container: Reel 0
  • 1,500 $0.7317
  • 3,000 $0.7261
  • 6,000 $0.7205
  • 9,000 $0.7150
  • 12,000 $0.7095
$0.7095 / $0.7317 Buy Now
DISTI # PSMN0R9-25YLDX
TME Transistor: N-MOSFET, NextPowerS3, unipolar, 25V, 285A, Idm: 1614A Min Qty: 1 0
  • 1 $2.2200
  • 5 $2.0000
  • 25 $1.7600
  • 100 $1.5900
  • 500 $1.4800
$1.4800 / $2.2200 RFQ
DISTI # PSMN0R9-25YLDX
Avnet Asia Transistor MOSFET N-CH 25V 300A 4-Pin SOT-669 T/R (Alt: PSMN0R9-25YLDX) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 10 Weeks, 0 Days 0
  • 1,500 $0.7293
  • 3,000 $0.7199
  • 4,500 $0.7106
  • 7,500 $0.7016
  • 15,000 $0.6843
  • 37,500 $0.6678
  • 75,000 $0.6521
$0.6521 / $0.7293 Buy Now
DISTI # PSMN0R9-25YLDX
Avnet Silica Transistor MOSFET N-CH 25V 300A 4-Pin SOT-669 T/R (Alt: PSMN0R9-25YLDX) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 12 Weeks, 0 Days Silica - 1500
Buy Now
DISTI # PSMN0R9-25YLDX
EBV Elektronik Transistor MOSFET N-CH 25V 300A 4-Pin SOT-669 T/R (Alt: PSMN0R9-25YLDX) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 12 Weeks, 0 Days EBV - 0
Buy Now

Part Details for PSMN0R9-25YLDX

PSMN0R9-25YLDX CAD Models

PSMN0R9-25YLDX Part Data Attributes

PSMN0R9-25YLDX Nexperia
Buy Now Datasheet
Compare Parts:
PSMN0R9-25YLDX Nexperia PSMN0R9-25YLD - N-channel 25 V, 0.85 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3tttTechnology@en-us SOIC 4-Pin
Part Life Cycle Code Active
Ihs Manufacturer NEXPERIA
Part Package Code SOIC
Package Description SMALL OUTLINE, R-PSSO-G4
Pin Count 4
Manufacturer Package Code SOT669
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 10 Weeks
Samacsys Manufacturer Nexperia
Additional Feature HIGH RELIABILITY
Avalanche Energy Rating (Eas) 3343 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 25 V
Drain Current-Max (ID) 300 A
Drain-source On Resistance-Max 0.0012 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code MO-235
JESD-30 Code R-PSSO-G4
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 1614 A
Reference Standard IEC-60134
Surface Mount YES
Terminal Finish TIN
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for PSMN0R9-25YLDX

This table gives cross-reference parts and alternative options found for PSMN0R9-25YLDX. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of PSMN0R9-25YLDX, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
934069907115 Nexperia Check for Price Power Field-Effect Transistor, 300A I(D), 25V, 0.0012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-235 PSMN0R9-25YLDX vs 934069907115

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