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PSMN0R9-25YLD - N-channel 25 V, 0.85 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3tttTechnology@en-us SOIC 4-Pin
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
PSMN0R9-25YLDX by Nexperia is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
84Y6414
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Newark | Mosfet, N-Ch, 25V, 300A, Sot-669-4, Transistor Polarity:N Channel, Continuous Drain Current Id:300A, Drain Source Voltage Vds:25V, On Resistance Rds(On):720Μohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:1.73V, Power Rohs Compliant: Yes |Nexperia PSMN0R9-25YLDX RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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$0.7910 / $1.6500 | Buy Now |
DISTI #
PSMN0R9-25YLDX
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Avnet Americas | Transistor MOSFET N-CH 25V 300A 4-Pin SOT-669 T/R - Tape and Reel (Alt: PSMN0R9-25YLDX) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 10 Weeks, 0 Days Container: Reel | 0 |
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$0.7095 / $0.7317 | Buy Now |
DISTI #
PSMN0R9-25YLDX
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TME | Transistor: N-MOSFET, NextPowerS3, unipolar, 25V, 285A, Idm: 1614A Min Qty: 1 | 0 |
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$1.4800 / $2.2200 | RFQ |
DISTI #
PSMN0R9-25YLDX
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Avnet Asia | Transistor MOSFET N-CH 25V 300A 4-Pin SOT-669 T/R (Alt: PSMN0R9-25YLDX) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 10 Weeks, 0 Days | 0 |
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$0.6521 / $0.7293 | Buy Now |
DISTI #
PSMN0R9-25YLDX
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Avnet Silica | Transistor MOSFET N-CH 25V 300A 4-Pin SOT-669 T/R (Alt: PSMN0R9-25YLDX) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 12 Weeks, 0 Days | Silica - 1500 |
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Buy Now | |
DISTI #
PSMN0R9-25YLDX
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EBV Elektronik | Transistor MOSFET N-CH 25V 300A 4-Pin SOT-669 T/R (Alt: PSMN0R9-25YLDX) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 12 Weeks, 0 Days | EBV - 0 |
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Buy Now |
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PSMN0R9-25YLDX
Nexperia
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Datasheet
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PSMN0R9-25YLDX
Nexperia
PSMN0R9-25YLD - N-channel 25 V, 0.85 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3tttTechnology@en-us SOIC 4-Pin
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Part Life Cycle Code | Active | |
Ihs Manufacturer | NEXPERIA | |
Part Package Code | SOIC | |
Package Description | SMALL OUTLINE, R-PSSO-G4 | |
Pin Count | 4 | |
Manufacturer Package Code | SOT669 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 10 Weeks | |
Samacsys Manufacturer | Nexperia | |
Additional Feature | HIGH RELIABILITY | |
Avalanche Energy Rating (Eas) | 3343 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 25 V | |
Drain Current-Max (ID) | 300 A | |
Drain-source On Resistance-Max | 0.0012 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | MO-235 | |
JESD-30 Code | R-PSSO-G4 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 1614 A | |
Reference Standard | IEC-60134 | |
Surface Mount | YES | |
Terminal Finish | TIN | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for PSMN0R9-25YLDX. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of PSMN0R9-25YLDX, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
934069907115 | Nexperia | Check for Price | Power Field-Effect Transistor, 300A I(D), 25V, 0.0012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-235 | PSMN0R9-25YLDX vs 934069907115 |