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PSMN0R9-25YLD - N-channel 25 V, 0.85 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3tttTechnology@en-us SOIC 4-Pin
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PSMN0R9-25YLDX by Nexperia is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
84Y6414
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Newark | Mosfet, N-Ch, 25V, 300A, Sot-669-4, Transistor Polarity:N Channel, Continuous Drain Current Id:300A, Drain Source Voltage Vds:25V, On Resistance Rds(On):720Μohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:1.73V, Power Rohs Compliant: Yes |Nexperia PSMN0R9-25YLDX RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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$0.7910 / $2.0000 | Buy Now |
DISTI #
PSMN0R9-25YLDX
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Avnet Americas | Transistor MOSFET N-CH 25V 300A 4-Pin SOT-669 T/R - Tape and Reel (Alt: PSMN0R9-25YLDX) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 10 Weeks, 0 Days Container: Reel | 0 |
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$0.7095 / $0.7317 | Buy Now |
DISTI #
PSMN0R9-25YLDX
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TME | Transistor: N-MOSFET, NextPowerS3, unipolar, 25V, 285A, Idm: 1614A Min Qty: 1 | 0 |
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$1.4400 / $2.1500 | RFQ |
DISTI #
PSMN0R9-25YLDX
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Avnet Asia | Transistor MOSFET N-CH 25V 300A 4-Pin SOT-669 T/R (Alt: PSMN0R9-25YLDX) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 10 Weeks, 0 Days | 0 |
|
$0.6521 / $0.7293 | Buy Now |
DISTI #
PSMN0R9-25YLDX
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Avnet Silica | Transistor MOSFET NCH 25V 300A 4Pin SOT669 TR (Alt: PSMN0R9-25YLDX) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 12 Weeks, 0 Days | Silica - 1500 |
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Buy Now | |
DISTI #
PSMN0R9-25YLDX
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EBV Elektronik | Transistor MOSFET NCH 25V 300A 4Pin SOT669 TR (Alt: PSMN0R9-25YLDX) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 12 Weeks, 0 Days | EBV - 0 |
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Buy Now |
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PSMN0R9-25YLDX
Nexperia
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Datasheet
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PSMN0R9-25YLDX
Nexperia
PSMN0R9-25YLD - N-channel 25 V, 0.85 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3tttTechnology@en-us SOIC 4-Pin
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | NEXPERIA | |
Part Package Code | SOIC | |
Package Description | SOP-8, 4 PIN | |
Pin Count | 4 | |
Manufacturer Package Code | SOT669 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 10 Weeks | |
Samacsys Manufacturer | Nexperia | |
Additional Feature | HIGH RELIABILITY | |
Avalanche Energy Rating (Eas) | 3343 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 25 V | |
Drain Current-Max (ID) | 300 A | |
Drain-source On Resistance-Max | 0.0012 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | MO-235 | |
JESD-30 Code | R-PSSO-G4 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 1614 A | |
Reference Standard | IEC-60134 | |
Surface Mount | YES | |
Terminal Finish | TIN | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |