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PSMN0R9-30YLD by:

Power Field-Effect Transistor

Part Details for PSMN0R9-30YLD by Nexperia

Overview of PSMN0R9-30YLD by Nexperia

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Part Details for PSMN0R9-30YLD

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PSMN0R9-30YLD Part Data Attributes

PSMN0R9-30YLD Nexperia
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PSMN0R9-30YLD Nexperia Power Field-Effect Transistor
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer NEXPERIA
Package Description SMALL OUTLINE, R-PSSO-G4
Reach Compliance Code not_compliant
ECCN Code EAR99
Date Of Intro 2017-02-17
Samacsys Manufacturer Nexperia
Additional Feature AVALANCHE RATED, HIGH RELIABILITY
Avalanche Energy Rating (Eas) 2987 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 300 A
Drain-source On Resistance-Max 0.00109 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G4
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 1800 A
Reference Standard IEC-60134
Surface Mount YES
Terminal Finish TIN
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

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