-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
N-channel TrenchMOS SiliconMAX standard level FET@en-us SOIC 4-Pin
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Manufacturer | Description | Datasheet |
---|---|---|---|
G825K008200YEU | Amphenol Communications Solutions | Board mount - Header Plug - Pin Header 2.0mm Pitch Vertical,2x4Pin,Gold Flash,NY6T,3.8mm*2.0mm*3.0mm | |
10109832-Z0200YYLF | Amphenol Communications Solutions | 10109832-Z0200YYLF-POWER USB TO LNL CABLE | |
G825K006200YEU | Amphenol Communications Solutions | Board mount - Header Plug - Pin Header 2.0mm Pitch Vertical,2x3Pin,Gold Flash,NY6T,3.8mm*2.0mm*3.0mm |
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
74AH1193
|
Newark | Mosfet, N-Ch, 200V, 21.5A, Lfpak56 Rohs Compliant: Yes |Nexperia PSMN102-200Y,115 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 10054 |
|
$0.6380 / $1.2400 | Buy Now |
DISTI #
PSMN102-200Y,115
|
Avnet Americas | Power MOSFET, N Channel, 200 V, 21.5 A, 102 MilliOhms, SOT-669 (LFPAK), 4 Pins, Surface Mount - Tape and Reel (Alt: PSMN102-200Y,115) Min Qty: 1500 Package Multiple: 1500 Lead time: 10 Weeks, 0 Days Container: Reel | 0 |
|
$0.4681 / $0.4827 | Buy Now |
|
Rochester Electronics | PSMN102-200Y - N-channel TrenchMOS SiliconMAX standard level FET RoHS: Compliant Status: Active Min Qty: 1 | 40500 |
|
$0.3885 / $0.4571 | Buy Now |
DISTI #
PSMN102-200Y,115
|
Avnet Asia | Power MOSFET, N Channel, 200 V, 21.5 A, 102 MilliOhms, SOT-669 (LFPAK), 4 Pins, Surface Mount (Alt: PSMN102-200Y,115) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 10 Weeks, 0 Days | 0 |
|
$0.4302 / $0.4812 | Buy Now |
DISTI #
PSMN102-200Y,115
|
Avnet Silica | Power MOSFET, N Channel, 200 V, 21.5 A, 102 MilliOhms, SOT-669 (LFPAK), 4 Pins, Surface Mount (Alt: PSMN102-200Y,115) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 12 Weeks, 0 Days | Silica - 60000 |
|
Buy Now | |
DISTI #
PSMN102-200Y,115
|
EBV Elektronik | Power MOSFET, N Channel, 200 V, 21.5 A, 102 MilliOhms, SOT-669 (LFPAK), 4 Pins, Surface Mount (Alt: PSMN102-200Y,115) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 12 Weeks, 0 Days | EBV - 3000 |
|
Buy Now |
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
|
PSMN102-200Y,115
Nexperia
Buy Now
Datasheet
|
Compare Parts:
PSMN102-200Y,115
Nexperia
N-channel TrenchMOS SiliconMAX standard level FET@en-us SOIC 4-Pin
|
Part Life Cycle Code | Active | |
Ihs Manufacturer | NEXPERIA | |
Part Package Code | SOIC | |
Package Description | SMALL OUTLINE, R-PSSO-G4 | |
Pin Count | 4 | |
Manufacturer Package Code | SOT669 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 4 Weeks | |
Samacsys Manufacturer | Nexperia | |
Avalanche Energy Rating (Eas) | 202 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 200 V | |
Drain Current-Max (ID) | 21.5 A | |
Drain-source On Resistance-Max | 0.102 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSSO-G4 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 65 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | TIN | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for PSMN102-200Y,115. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of PSMN102-200Y,115, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
PSMN102-200Y,115 | NXP Semiconductors | Check for Price | N-channel TrenchMOS SiliconMAX standard level FET SOIC 4-Pin | PSMN102-200Y,115 vs PSMN102-200Y,115 |
PSMN102-200Y | NXP Semiconductors | Check for Price | TRANSISTOR 21.5 A, 200 V, 0.102 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235, PLASTIC, LFPAK-4, FET General Purpose Power | PSMN102-200Y,115 vs PSMN102-200Y |
PSMN102-200Y | Nexperia | Check for Price | Power Field-Effect Transistor | PSMN102-200Y,115 vs PSMN102-200Y |