Datasheets
PSMN102-200Y,115 by:

N-channel TrenchMOS SiliconMAX standard level FET@en-us SOIC 4-Pin

Part Details for PSMN102-200Y,115 by Nexperia

Overview of PSMN102-200Y,115 by Nexperia

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Available Datasheets

Part # Manufacturer Description Datasheet
G825K008200YEU Amphenol Communications Solutions Board mount - Header Plug - Pin Header 2.0mm Pitch Vertical,2x4Pin,Gold Flash,NY6T,3.8mm*2.0mm*3.0mm
10109832-Z0200YYLF Amphenol Communications Solutions 10109832-Z0200YYLF-POWER USB TO LNL CABLE
G825K006200YEU Amphenol Communications Solutions Board mount - Header Plug - Pin Header 2.0mm Pitch Vertical,2x3Pin,Gold Flash,NY6T,3.8mm*2.0mm*3.0mm

Price & Stock for PSMN102-200Y,115

Part # Distributor Description Stock Price Buy
DISTI # 74AH1193
Newark Mosfet, N-Ch, 200V, 21.5A, Lfpak56 Rohs Compliant: Yes |Nexperia PSMN102-200Y,115 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape 10054
  • 1 $1.2400
  • 10 $1.1000
  • 25 $0.9970
  • 50 $0.8930
  • 100 $0.7880
  • 250 $0.7290
  • 500 $0.6690
  • 1,000 $0.6380
$0.6380 / $1.2400 Buy Now
DISTI # PSMN102-200Y,115
Avnet Americas Power MOSFET, N Channel, 200 V, 21.5 A, 102 MilliOhms, SOT-669 (LFPAK), 4 Pins, Surface Mount - Tape and Reel (Alt: PSMN102-200Y,115) Min Qty: 1500 Package Multiple: 1500 Lead time: 10 Weeks, 0 Days Container: Reel 0
  • 1,500 $0.4827
  • 3,000 $0.4790
  • 6,000 $0.4754
  • 9,000 $0.4718
  • 12,000 $0.4681
$0.4681 / $0.4827 Buy Now
Rochester Electronics PSMN102-200Y - N-channel TrenchMOS SiliconMAX standard level FET RoHS: Compliant Status: Active Min Qty: 1 40500
  • 1 $0.4571
  • 25 $0.4480
  • 100 $0.4297
  • 500 $0.4114
  • 1,000 $0.3885
$0.3885 / $0.4571 Buy Now
DISTI # PSMN102-200Y,115
Avnet Asia Power MOSFET, N Channel, 200 V, 21.5 A, 102 MilliOhms, SOT-669 (LFPAK), 4 Pins, Surface Mount (Alt: PSMN102-200Y,115) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 10 Weeks, 0 Days 0
  • 1,500 $0.4812
  • 3,000 $0.4749
  • 4,500 $0.4688
  • 7,500 $0.4629
  • 15,000 $0.4515
  • 37,500 $0.4406
  • 75,000 $0.4302
$0.4302 / $0.4812 Buy Now
DISTI # PSMN102-200Y,115
Avnet Silica Power MOSFET, N Channel, 200 V, 21.5 A, 102 MilliOhms, SOT-669 (LFPAK), 4 Pins, Surface Mount (Alt: PSMN102-200Y,115) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 12 Weeks, 0 Days Silica - 60000
Buy Now
DISTI # PSMN102-200Y,115
EBV Elektronik Power MOSFET, N Channel, 200 V, 21.5 A, 102 MilliOhms, SOT-669 (LFPAK), 4 Pins, Surface Mount (Alt: PSMN102-200Y,115) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 12 Weeks, 0 Days EBV - 3000
Buy Now

Part Details for PSMN102-200Y,115

PSMN102-200Y,115 CAD Models

PSMN102-200Y,115 Part Data Attributes

PSMN102-200Y,115 Nexperia
Buy Now Datasheet
Compare Parts:
PSMN102-200Y,115 Nexperia N-channel TrenchMOS SiliconMAX standard level FET@en-us SOIC 4-Pin
Part Life Cycle Code Active
Ihs Manufacturer NEXPERIA
Part Package Code SOIC
Package Description SMALL OUTLINE, R-PSSO-G4
Pin Count 4
Manufacturer Package Code SOT669
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 4 Weeks
Samacsys Manufacturer Nexperia
Avalanche Energy Rating (Eas) 202 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V
Drain Current-Max (ID) 21.5 A
Drain-source On Resistance-Max 0.102 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G4
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 65 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for PSMN102-200Y,115

This table gives cross-reference parts and alternative options found for PSMN102-200Y,115. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of PSMN102-200Y,115, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
PSMN102-200Y,115 NXP Semiconductors Check for Price N-channel TrenchMOS SiliconMAX standard level FET SOIC 4-Pin PSMN102-200Y,115 vs PSMN102-200Y,115
PSMN102-200Y NXP Semiconductors Check for Price TRANSISTOR 21.5 A, 200 V, 0.102 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235, PLASTIC, LFPAK-4, FET General Purpose Power PSMN102-200Y,115 vs PSMN102-200Y
PSMN102-200Y Nexperia Check for Price Power Field-Effect Transistor PSMN102-200Y,115 vs PSMN102-200Y

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