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PSMN1R0-30YLC - N-channel 30 V 1.15 mΩ logic level MOSFET in LFPAK using NextPower technology@en-us SOIC 4-Pin
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
55T6966
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Newark | Mosfet, N Channel, 30V, 100A, Lfpak, Channel Type:N Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:100A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1.41V Rohs Compliant: Yes |Nexperia PSMN1R0-30YLC,115 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 1592 |
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$1.2100 / $1.7600 | Buy Now |
DISTI #
86AK6010
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Newark | Mosfet, N-Ch, 30V, 100A, Sot-669 Rohs Compliant: Yes |Nexperia PSMN1R0-30YLC,115 RoHS: Compliant Min Qty: 1500 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
|
$0.9340 / $1.0300 | Buy Now |
DISTI #
1727-5293-1-ND
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DigiKey | MOSFET N-CH 30V 100A LFPAK56 Min Qty: 1 Lead time: 13 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
25744 In Stock |
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$0.8981 / $2.7700 | Buy Now |
DISTI #
PSMN1R0-30YLC,115
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Avnet Americas | Trans MOSFET N-CH 30V 100A 5-Pin(4+Tab) LFPAK T/R - Tape and Reel (Alt: PSMN1R0-30YLC,115) Min Qty: 1500 Package Multiple: 1500 Lead time: 13 Weeks, 0 Days Container: Reel | 0 |
|
$0.4958 | Buy Now |
DISTI #
771-PSMN1R0-30YLC115
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Mouser Electronics | MOSFETs PSMN1R0-30YLC/SOT669/LFPAK RoHS: Compliant | 38136 |
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$0.7270 / $1.3300 | Buy Now |
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Future Electronics | N-Channel 30 V 1.5 mOhm Surface Mount Logic Level MOSFET - LFPAK-56 RoHS: Compliant pbFree: Yes Min Qty: 1500 Package Multiple: 1500 Lead time: 13 Weeks Container: Reel | 1500Reel |
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$0.7300 / $0.7850 | Buy Now |
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Future Electronics | N-Channel 30 V 1.5 mOhm Surface Mount Logic Level MOSFET - LFPAK-56 RoHS: Compliant pbFree: Yes Min Qty: 1500 Package Multiple: 1500 Lead time: 13 Weeks Container: Reel | 0Reel |
|
$0.7300 / $0.7850 | Buy Now |
DISTI #
PSMN1R0-30YLC.115
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TME | Transistor: N-MOSFET, unipolar, 30V, 100A, 272W Min Qty: 1 | 592 |
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$1.3100 / $1.9800 | Buy Now |
DISTI #
PSMN1R0-30YLC,115
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Avnet Asia | Trans MOSFET N-CH 30V 100A 5-Pin(4+Tab) LFPAK T/R (Alt: PSMN1R0-30YLC,115) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 13 Weeks, 0 Days | 0 |
|
$0.5397 / $0.5783 | Buy Now |
DISTI #
PSMN1R0-30YLC,115
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Avnet Silica | Trans MOSFET N-CH 30V 100A 5-Pin(4+Tab) LFPAK T/R (Alt: PSMN1R0-30YLC,115) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 15 Weeks, 0 Days | Silica - 0 |
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Buy Now |
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PSMN1R0-30YLC,115
Nexperia
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Datasheet
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PSMN1R0-30YLC,115
Nexperia
PSMN1R0-30YLC - N-channel 30 V 1.15 mΩ logic level MOSFET in LFPAK using NextPower technology@en-us SOIC 4-Pin
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | NEXPERIA | |
Part Package Code | SOIC | |
Package Description | PLASTIC, POWER, SOP-8, LFPAK56-4 | |
Pin Count | 4 | |
Manufacturer Package Code | SOT669 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Nexperia | |
Additional Feature | HIGH RELIABILITY, ULTRA LOW RESISTANCE | |
Avalanche Energy Rating (Eas) | 259 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 100 A | |
Drain-source On Resistance-Max | 0.0014 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | MO-235 | |
JESD-30 Code | R-PSSO-G4 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 1450 A | |
Reference Standard | IEC-60134 | |
Surface Mount | YES | |
Terminal Finish | TIN | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |