Part Details for PSMN1R2-25YLC by NXP Semiconductors
Overview of PSMN1R2-25YLC by NXP Semiconductors
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for PSMN1R2-25YLC
| Part # | Distributor | Description | Stock | Price | Buy | |
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Chip1Cloud | NextPower 25 V &, 30 V MOSFETs in LFPAK(Power-SO8) | 30300 |
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RFQ | |
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Win Source Electronics | NextPower 25 V & 30 V MOSFETs in LFPAK(Power-SO8) | 15003 |
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$0.8540 / $1.0740 | Buy Now |
Part Details for PSMN1R2-25YLC
PSMN1R2-25YLC CAD Models
PSMN1R2-25YLC Part Data Attributes:
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PSMN1R2-25YLC
NXP Semiconductors
Buy Now
Datasheet
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Compare Parts:
PSMN1R2-25YLC
NXP Semiconductors
100A, 25V, 0.0017ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235, PLASTIC, POWER-SO8, LFPAK-4
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| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | NXP SEMICONDUCTORS | |
| Package Description | PLASTIC, POWER-SO8, LFPAK-4 | |
| Pin Count | 235 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Additional Feature | HIGH RELIABILITY, ULTRA-LOW RESISTANCE | |
| Avalanche Energy Rating (Eas) | 178 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 25 V | |
| Drain Current-Max (ID) | 100 A | |
| Drain-source On Resistance-Max | 0.0017 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | MO-235 | |
| JESD-30 Code | R-PSSO-G4 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 1133 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |