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PSMN2R6-40YS - N-channel LFPAK 40 V 2.8 mΩ standard level MOSFET@en-us SOIC 4-Pin
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Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
62R9338
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Newark | Mosfet Transistor, N Channel, 100 A, 40 V, 2 Mohm, 10 V, 3 V Rohs Compliant: Yes |Nexperia PSMN2R6-40YS,115 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 3600 |
|
$0.5400 / $1.1500 | Buy Now |
DISTI #
PSMN2R6-40YS,115
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Avnet Americas | Trans MOSFET N-CH 40V 100A 5-Pin(4+Tab) LFPAK T/R - Tape and Reel (Alt: PSMN2R6-40YS,115) Min Qty: 1500 Package Multiple: 1500 Lead time: 13 Weeks, 0 Days Container: Reel | 0 |
|
$0.5629 / $0.5805 | Buy Now |
DISTI #
PSMN2R6-40YS.115
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TME | Transistor: N-MOSFET, unipolar, 40V, 100A, 131W Min Qty: 1 | 0 |
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$0.7800 / $1.1600 | RFQ |
DISTI #
PSMN2R6-40YS,115
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Avnet Asia | Trans MOSFET N-CH 40V 100A 5-Pin(4+Tab) LFPAK T/R (Alt: PSMN2R6-40YS,115) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 13 Weeks, 0 Days | 0 |
|
$0.5174 / $0.6283 | Buy Now |
DISTI #
PSMN2R6-40YS,115
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Avnet Silica | Trans MOSFET N-CH 40V 100A 5-Pin(4+Tab) LFPAK T/R (Alt: PSMN2R6-40YS,115) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 15 Weeks, 0 Days | Silica - 10500 |
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Buy Now | |
DISTI #
PSMN2R6-40YS,115
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EBV Elektronik | Trans MOSFET N-CH 40V 100A 5-Pin(4+Tab) LFPAK T/R (Alt: PSMN2R6-40YS,115) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 15 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
|
New Advantage Corporation | PSMN2R6 Series 40 V 5.3 mOhm 63 nC N-Channel Logic Level MOSFET - LFPAK-4 RoHS: Compliant Min Qty: 1 Package Multiple: 1500 | 10500 |
|
$0.7333 / $0.7857 | Buy Now |
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PSMN2R6-40YS,115
Nexperia
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Datasheet
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PSMN2R6-40YS,115
Nexperia
PSMN2R6-40YS - N-channel LFPAK 40 V 2.8 mΩ standard level MOSFET@en-us SOIC 4-Pin
|
Rohs Code | Yes | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | NEXPERIA | |
Part Package Code | SOIC | |
Package Description | LFPAK-4 | |
Pin Count | 4 | |
Manufacturer Package Code | SOT669 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Nexperia | |
Avalanche Energy Rating (Eas) | 179 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 40 V | |
Drain Current-Max (ID) | 100 A | |
Drain-source On Resistance-Max | 0.0028 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | MO-235 | |
JESD-30 Code | R-PSSO-G4 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 651 A | |
Surface Mount | YES | |
Terminal Finish | TIN | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |