Part Details for PSMN2R6-40YS by Nexperia
Overview of PSMN2R6-40YS by Nexperia
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Part Details for PSMN2R6-40YS
PSMN2R6-40YS CAD Models
PSMN2R6-40YS Part Data Attributes:
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PSMN2R6-40YS
Nexperia
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PSMN2R6-40YS
Nexperia
Power Field-Effect Transistor
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Rohs Code | Yes | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | NEXPERIA | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Date Of Intro | 2017-02-01 | |
Samacsys Manufacturer | Nexperia | |
Avalanche Energy Rating (Eas) | 179 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 40 V | |
Drain Current-Max (ID) | 100 A | |
Drain-source On Resistance-Max | 0.0028 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | MO-235 | |
JESD-30 Code | R-PSSO-G4 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 651 A | |
Surface Mount | YES | |
Terminal Finish | TIN | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |