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Transistors / Power Field-Effect Transistors / PSMN3R0-60BS,118
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PSMN3R0-60BS,118 by:

PSMN3R0-60BS - N-channel 60 V 3.2 mΩ standard level MOSFET in D2PAK@en-us D2PAK 3-Pin

Part Details for PSMN3R0-60BS,118 by Nexperia

Overview of PSMN3R0-60BS,118 by Nexperia

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Price & Stock for PSMN3R0-60BS,118

Part # Distributor Description Stock Price Buy
DISTI # 05W5724
Newark Mosfet, N Channel, 60V, 100A, D2Pak, Transistor Polarity:N Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:100A, On Resistance Rds(On):0.0032Ohm, Transistor Mounting:Surface Mount, Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes |Nexperia PSMN3R0-60BS,118 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 1 $2.3000
  • 10 $2.0600
  • 100 $1.5200
$1.5200 / $2.3000 Buy Now
DISTI # 1727-PSMN3R0-60BS,118CT-ND
DigiKey MOSFET N-CH 60V 100A D2PAK Min Qty: 1 Lead time: 13 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) 3980
In Stock
  • 1 $3.1100
  • 10 $2.6120
  • 100 $2.1134
  • 800 $1.8786
  • 1,600 $1.6085
  • 2,400 $1.5146
  • 5,600 $1.4531
$1.4531 / $3.1100 Buy Now
DISTI # PSMN3R0-60BS,118
Avnet Americas Trans MOSFET N-CH 60V 100A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: PSMN3R0-60BS,118) RoHS: Compliant Min Qty: 4800 Package Multiple: 800 Lead time: 13 Weeks, 0 Days Container: Reel 0
  • 4,800 $1.4323
  • 6,400 $1.3936
  • 11,200 $1.3549
  • 24,000 $1.3162
  • 48,000 $1.2775
  • 240,000 $1.2388
  • 480,000 $1.2001
$1.2001 / $1.4323 Buy Now
DISTI # 771-PSMN3R0-60BS,118
Mouser Electronics MOSFET PSMN3R0-60BS/SOT404/D2PAK RoHS: Compliant 5488
  • 1 $2.9000
  • 10 $2.4300
  • 25 $2.3000
  • 100 $1.9700
  • 250 $1.8600
  • 500 $1.7500
  • 800 $1.4800
  • 2,400 $1.4000
  • 4,800 $1.3100
$1.3100 / $2.9000 Buy Now
DISTI # V36:1790_06540901
Arrow Electronics Trans MOSFET N-CH 60V 100A 3-Pin(2+Tab) D2PAK T/R Min Qty: 800 Package Multiple: 800 Lead time: 13 Weeks Date Code: 2337 Americas - 800
  • 800 $1.4726
  • 1,600 $1.4578
  • 2,400 $1.3941
  • 4,800 $1.3057
  • 5,600 $1.2926
$1.2926 / $1.4726 Buy Now
Future Electronics   RoHS: Compliant pbFree: No Min Qty: 4800 Package Multiple: 800 0
  • 4,800 $1.2800
$1.2800 Buy Now
DISTI # PSMN3R0-60BS,118
Avnet Americas Trans MOSFET N-CH 60V 100A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: PSMN3R0-60BS,118) RoHS: Compliant Min Qty: 4800 Package Multiple: 800 Lead time: 13 Weeks, 0 Days Container: Reel 0
  • 4,800 $1.4323
  • 6,400 $1.3936
  • 11,200 $1.3549
  • 24,000 $1.3162
  • 48,000 $1.2775
  • 240,000 $1.2388
  • 480,000 $1.2001
$1.2001 / $1.4323 Buy Now
DISTI # PSMN3R0-60BS.118
TME Transistor: N-MOSFET, unipolar, 60V, 100A, Idm: 824A, 306W Min Qty: 1 0
  • 1 $2.9800
  • 5 $2.6900
  • 25 $2.3600
  • 100 $2.1200
$2.1200 / $2.9800 RFQ
DISTI # 2114729
Farnell MOSFET, N-CH, 60V, 100A, D2PAK RoHS: Compliant Min Qty: 4800 Lead time: 14 Weeks, 1 Days Container: Each 0
  • 4,800 $1.4750
$1.4750 Buy Now

Part Details for PSMN3R0-60BS,118

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PSMN3R0-60BS,118 Part Data Attributes:

Parametric Data
PSMN3R0-60BS,118 Nexperia
Buy Now Datasheet
Compare Parts:
PSMN3R0-60BS,118 Nexperia PSMN3R0-60BS - N-channel 60 V 3.2 mΩ standard level MOSFET in D2PAK@en-us D2PAK 3-Pin
Part Life Cycle Code Active
Ihs Manufacturer NEXPERIA
Part Package Code D2PAK
Package Description SMALL OUTLINE, R-PSSO-G2
Pin Count 3
Manufacturer Package Code SOT404
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer Nexperia
Avalanche Energy Rating (Eas) 800 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 100 A
Drain-source On Resistance-Max 0.0032 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 245
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 824 A
Reference Standard IEC-60134
Surface Mount YES
Terminal Finish TIN
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

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