Part Details for PSMN3R0-60ES by Nexperia
Overview of PSMN3R0-60ES by Nexperia
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Renewable Energy
Price & Stock for PSMN3R0-60ES
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
PSMN3R0-60ES,127
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Avnet Americas | Trans MOSFET N-CH 60V 100A 3-Pin(3+Tab) I2PAK Rail - Rail/Tube (Alt: PSMN3R0-60ES,127) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Container: Tube | 0 |
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RFQ | |
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DISTI #
PSMN3R0-60ES,127
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Avnet Americas | Trans MOSFET N-CH 60V 100A 3-Pin(3+Tab) I2PAK Rail - Rail/Tube (Alt: PSMN3R0-60ES,127) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Container: Tube | 0 |
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RFQ |
Part Details for PSMN3R0-60ES
PSMN3R0-60ES CAD Models
PSMN3R0-60ES Part Data Attributes:
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PSMN3R0-60ES
Nexperia
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Datasheet
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Compare Parts:
PSMN3R0-60ES
Nexperia
Power Field-Effect Transistor, 100A I(D), 60V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | NEXPERIA | |
| Package Description | IN-LINE, R-PSIP-T3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 800 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 100 A | |
| Drain-source On Resistance-Max | 0.003 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-262AA | |
| JESD-30 Code | R-PSIP-T3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 824 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |