-
Part Symbol
-
Footprint
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Part Details for PSMN4R8-100BSE by Nexperia
Overview of PSMN4R8-100BSE by Nexperia
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (7 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for PSMN4R8-100BSE
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
|
Bristol Electronics | 2054 |
|
RFQ | ||
|
|
Bristol Electronics | Min Qty: 2 | 11 |
|
$2.1840 / $3.3600 | Buy Now |
|
|
Quest Components | POWER FIELD-EFFECT TRANSISTOR, 120A I(D), 100V, 0.0048OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 1643 |
|
$1.8750 / $3.7500 | Buy Now |
Part Details for PSMN4R8-100BSE
PSMN4R8-100BSE CAD Models
PSMN4R8-100BSE Part Data Attributes:
|
|
PSMN4R8-100BSE
Nexperia
Buy Now
Datasheet
|
Compare Parts:
PSMN4R8-100BSE
Nexperia
Power Field-Effect Transistor, 120A I(D), 100V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | NEXPERIA | |
| Package Description | D2PAK-3/2 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Samacsys Manufacturer | Nexperia | |
| Avalanche Energy Rating (Eas) | 542 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 120 A | |
| Drain-source On Resistance-Max | 0.0048 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 643 pF | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 405 W | |
| Power Dissipation-Max (Abs) | 405 W | |
| Pulsed Drain Current-Max (IDM) | 707 A | |
| Reference Standard | IEC-60134 | |
| Surface Mount | YES | |
| Terminal Finish | TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 294 ns | |
| Turn-on Time-Max (ton) | 159 ns |
Alternate Parts for PSMN4R8-100BSE
This table gives cross-reference parts and alternative options found for PSMN4R8-100BSE. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of PSMN4R8-100BSE, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRFB4110PBF | Power Field-Effect Transistor, 180A I(D), 100V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3 | Infineon Technologies AG | PSMN4R8-100BSE vs IRFB4110PBF |
| PSMN4R8-100PSEQ | PSMN4R8-100PSE - N-channel 100 V 5 mΩ standard level MOSFET with improved SOA in TO220 package@en-us TO-220 3-Pin | Nexperia | PSMN4R8-100BSE vs PSMN4R8-100PSEQ |
| IPB120N10S4-05 | Power Field-Effect Transistor | Infineon Technologies AG | PSMN4R8-100BSE vs IPB120N10S4-05 |
| PSMN4R8-100BSEJ | PSMN4R8-100BSE - N-channel 100 V 4.8 mΩ standard level MOSFET in D2PAK@en-us D2PAK 3-Pin | Nexperia | PSMN4R8-100BSE vs PSMN4R8-100BSEJ |
| IPI120N10S4-05 | Power Field-Effect Transistor | Infineon Technologies AG | PSMN4R8-100BSE vs IPI120N10S4-05 |
| IRFB4110GPBF | Power Field-Effect Transistor, 120A I(D), 100V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN AND LEAD FREE, PLASTIC PACKAGE-3 | Infineon Technologies AG | PSMN4R8-100BSE vs IRFB4110GPBF |
| PSMN4R8-100PSE | Power Field-Effect Transistor | Nexperia | PSMN4R8-100BSE vs PSMN4R8-100PSE |