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Transistors / Power Field-Effect Transistors / PSMN4R8-100PSEQ
Datasheets
PSMN4R8-100PSEQ by:

PSMN4R8-100PSE - N-channel 100 V 5 mΩ standard level MOSFET with improved SOA in TO220 package@en-us TO-220 3-Pin

Part Details for PSMN4R8-100PSEQ by Nexperia

Results Overview of PSMN4R8-100PSEQ by Nexperia

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

PSMN4R8-100PSEQ Information

PSMN4R8-100PSEQ by Nexperia is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for PSMN4R8-100PSEQ

Part # Distributor Description Stock Price Buy
Rochester Electronics PSMN4R8-100PSE - N-channel 100 V 5 mOhm standard level MOSFET RoHS: Compliant pbFree: Yes Status: End of Life / Last Time Buy Min Qty: 1 4970
  • 1 $2.3900
  • 25 $2.3400
  • 100 $2.2500
  • 500 $2.1500
  • 1,000 $2.0300
$2.0300 / $2.3900 Buy Now
DISTI # PSMN4R8-100PSEQ
TME Transistor: N-MOSFET, unipolar, 100V, 693A, Idm: 693A, 405W Min Qty: 1 0
  • 1 $4.8200
  • 3 $4.3300
  • 10 $3.8400
  • 50 $3.4600
  • 250 $3.2200
$3.2200 / $4.8200 RFQ
DISTI # PSMN4R8-100PSEQ
Avnet Asia Trans MOSFET N-CH 100V 120A 3-Pin TO-220AB Tube (Alt: PSMN4R8-100PSEQ) RoHS: Compliant Min Qty: 5000 Package Multiple: 1000 6000
RFQ

Part Details for PSMN4R8-100PSEQ

PSMN4R8-100PSEQ CAD Models

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PSMN4R8-100PSEQ Part Data Attributes

Parametric Data
PSMN4R8-100PSEQ Nexperia
Buy Now Datasheet
Compare Parts:
PSMN4R8-100PSEQ Nexperia PSMN4R8-100PSE - N-channel 100 V 5 mΩ standard level MOSFET with improved SOA in TO220 package@en-us TO-220 3-Pin
Part Life Cycle Code Obsolete
Ihs Manufacturer NEXPERIA
Part Package Code TO-220
Package Description FLANGE MOUNT, R-PSFM-T3
Pin Count 3
Manufacturer Package Code SOT78
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 4 Weeks
Samacsys Manufacturer Nexperia
Avalanche Energy Rating (Eas) 542 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 120 A
Drain-source On Resistance-Max 0.005 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 693 A
Reference Standard IEC-60134
Surface Mount NO
Terminal Finish TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for PSMN4R8-100PSEQ

This table gives cross-reference parts and alternative options found for PSMN4R8-100PSEQ. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of PSMN4R8-100PSEQ, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
PSMN4R8-100PSE Nexperia Check for Price Power Field-Effect Transistor PSMN4R8-100PSEQ vs PSMN4R8-100PSE
PSMN4R8-100BSEJ Nexperia $2.7592 PSMN4R8-100BSE - N-channel 100 V 4.8 mΩ standard level MOSFET in D2PAK@en-us D2PAK 3-Pin PSMN4R8-100PSEQ vs PSMN4R8-100BSEJ
IPP120N10S4-05 Infineon Technologies AG Check for Price Power Field-Effect Transistor PSMN4R8-100PSEQ vs IPP120N10S4-05
FDB047N10 onsemi $2.5223 Power MOSFET, N-Channel, QFET®, 100 V, 164 A, 4.7 mΩ, D2PAK, D2PAK-3 / TO-263-2, 800-REEL PSMN4R8-100PSEQ vs FDB047N10
IPB120N10S4-05 Infineon Technologies AG Check for Price Power Field-Effect Transistor PSMN4R8-100PSEQ vs IPB120N10S4-05

PSMN4R8-100PSEQ Related Parts

PSMN4R8-100PSEQ Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for PSMN4R8-100PSEQ is -55°C to 150°C.

  • To ensure proper biasing, follow the recommended voltage and current ratings in the datasheet, and ensure the device is operated within the specified power dissipation limits.

  • For optimal thermal performance, use a multi-layer PCB with a solid ground plane, and ensure good thermal conductivity between the device and the PCB. Follow Nexperia's recommended PCB layout guidelines for this device.

  • Follow standard ESD protection guidelines, including using ESD-sensitive handling and storage procedures, and incorporating ESD protection devices in the circuit design.

  • The PSMN4R8-100PSEQ meets or exceeds industry standards for reliability and quality, including AEC-Q101 and ISO/TS 16949. Refer to Nexperia's quality and reliability documentation for more information.

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