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PSMN5R0-80PS - N-channel 80 V, 4.7 mΩ standard level MOSFET in TO-220@en-us TO-220 3-Pin
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PSMN5R0-80PS,127 by Nexperia is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
62R9342
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Newark | Mosfet Transistor, N Channel, 100 A, 80 V, 3.7 Mohm, 10 V, 3 V Rohs Compliant: Yes |Nexperia PSMN5R0-80PS,127 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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Buy Now | |
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Rochester Electronics | Nexperia PSMN5R0-80PS - 100A, 80V, 0.0047ohm, N-Channel Power MOSFET, TO-220AB RoHS: Compliant Status: Active Min Qty: 1 | 165191 |
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$1.2200 / $1.4400 | Buy Now |
DISTI #
PSMN5R0-80PS.127
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TME | Transistor: N-MOSFET, unipolar, 80V, 100A, Idm: 598A, 270W Min Qty: 1 | 0 |
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$1.9500 / $2.9100 | RFQ |
DISTI #
PSMN5R0-80PS,127
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Avnet Asia | Trans MOSFET N-CH 80V 100A 3-Pin(3+Tab) TO-220AB Tube (Alt: PSMN5R0-80PS,127) RoHS: Compliant Min Qty: 5000 Package Multiple: 1000 | 5000 |
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RFQ | |
DISTI #
C1S548200096343
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Chip1Stop | PSMN5R0-80PS/SOT78/SIL3P RoHS: Compliant Container: Tube | 277 |
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$1.6700 / $2.3800 | Buy Now |
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PSMN5R0-80PS,127
Nexperia
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Datasheet
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PSMN5R0-80PS,127
Nexperia
PSMN5R0-80PS - N-channel 80 V, 4.7 mΩ standard level MOSFET in TO-220@en-us TO-220 3-Pin
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | NEXPERIA | |
Part Package Code | TO-220 | |
Package Description | SC-46, 3 PIN | |
Pin Count | 3 | |
Manufacturer Package Code | SOT78 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Nexperia | |
Avalanche Energy Rating (Eas) | 396 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 80 V | |
Drain Current-Max (ID) | 100 A | |
Drain-source On Resistance-Max | 0.0047 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 598 A | |
Surface Mount | NO | |
Terminal Finish | TIN | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |