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Transistors / Power Field-Effect Transistors / PSMN5R5-60YS,115
Datasheets
PSMN5R5-60YS,115 by:

PSMN5R5-60YS - N-channel LFPAK 60 V, 5.2 mΩ standard level FET@en-us SOIC 4-Pin

Part Details for PSMN5R5-60YS,115 by Nexperia

Results Overview of PSMN5R5-60YS,115 by Nexperia

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Applications Energy and Power Systems Medical Imaging Robotics and Drones

PSMN5R5-60YS,115 Information

PSMN5R5-60YS,115 by Nexperia is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for PSMN5R5-60YS,115

Part # Distributor Description Stock Price Buy
DISTI # 63R8569
Newark Mosfet, N-Ch, 60V, 100A, Sot-669, Channel Type:N Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:100A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Nexperia PSMN5R5-60YS,115 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape 14353
  • 1 $1.5200
  • 10 $1.2400
  • 25 $1.1600
  • 50 $1.0800
  • 100 $1.0100
  • 250 $0.9900
  • 500 $0.7860
  • 1,000 $0.7550
$0.7550 / $1.5200 Buy Now
DISTI # 86AK6019
Newark Mosfet, N-Ch, 60V, 100A, Sot-669 Rohs Compliant: Yes |Nexperia PSMN5R5-60YS,115 RoHS: Compliant Min Qty: 1500 Package Multiple: 1 Date Code: 1 Container: Reel 0
  • 1,500 $0.8960
  • 3,000 $0.8740
  • 6,000 $0.8570
  • 9,000 $0.8400
  • 15,000 $0.8120
$0.8120 / $0.8960 Buy Now
DISTI # PSMN5R5-60YS,115
Avnet Americas Trans MOSFET N-CH 60V 100A 5-Pin(4+Tab) LFPAK T/R - Tape and Reel (Alt: PSMN5R5-60YS,115) Min Qty: 1500 Package Multiple: 1500 Lead time: 10 Weeks, 0 Days Container: Reel 0
  • 1,500 $0.5995
  • 3,000 $0.5950
  • 6,000 $0.5905
  • 9,000 $0.5859
  • 12,000 $0.5814
$0.5814 / $0.5995 Buy Now
DISTI # PSMN5R5-60YS.115
TME Transistor: N-MOSFET, unipolar, 60V, 74A, 130W Min Qty: 1 2821
  • 1 $1.6100
  • 5 $1.4800
  • 25 $1.2800
  • 100 $1.1800
  • 500 $1.0900
$1.0900 / $1.6100 Buy Now
DISTI # PSMN5R5-60YS,115
Avnet Asia Trans MOSFET N-CH 60V 100A 5-Pin(4+Tab) LFPAK T/R (Alt: PSMN5R5-60YS,115) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 10 Weeks, 0 Days 0
  • 1,500 $0.5976
  • 3,000 $0.5899
  • 4,500 $0.5823
  • 7,500 $0.5749
  • 15,000 $0.5607
  • 37,500 $0.5472
  • 75,000 $0.5343
$0.5343 / $0.5976 Buy Now
DISTI # PSMN5R5-60YS,115
Avnet Silica Trans MOSFET N-CH 60V 100A 5-Pin(4+Tab) LFPAK T/R (Alt: PSMN5R5-60YS,115) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 12 Weeks, 0 Days Silica - 0
Buy Now
DISTI # PSMN5R5-60YS,115
EBV Elektronik Trans MOSFET N-CH 60V 100A 5-Pin(4+Tab) LFPAK T/R (Alt: PSMN5R5-60YS,115) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 12 Weeks, 0 Days EBV - 0
Buy Now
New Advantage Corporation PSMN5R5 Series 60 V 8.3 mOhm 56 nC SMT N-Channel Standard Level MOSFET - LFPAK-4 RoHS: Compliant Min Qty: 1 Package Multiple: 1500 12000
  • 1,500 $0.7857
  • 12,000 $0.7333
$0.7333 / $0.7857 Buy Now

Part Details for PSMN5R5-60YS,115

PSMN5R5-60YS,115 CAD Models

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PSMN5R5-60YS,115 Part Data Attributes

Parametric Data
PSMN5R5-60YS,115 Nexperia
Buy Now Datasheet
Compare Parts:
PSMN5R5-60YS,115 Nexperia PSMN5R5-60YS - N-channel LFPAK 60 V, 5.2 mΩ standard level FET@en-us SOIC 4-Pin
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer NEXPERIA
Part Package Code SOIC
Package Description LFPAK-4
Pin Count 4
Manufacturer Package Code SOT669
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer Nexperia
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 100 A
Drain-source On Resistance-Max 0.055 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code MO-235
JESD-30 Code R-PSSO-G4
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Surface Mount YES
Terminal Finish TIN
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

PSMN5R5-60YS,115 Related Parts

PSMN5R5-60YS,115 Frequently Asked Questions (FAQ)

  • The recommended PCB footprint for PSMN5R5-60YS,115 is a DPAK (TO-252) package with a minimum pad size of 6.5mm x 5.5mm and a thermal pad size of 3.5mm x 3.5mm.

  • To ensure reliability in high-temperature applications, ensure that the device is operated within the recommended junction temperature range (TJ) of -40°C to 150°C, and that the device is properly cooled using a heat sink or thermal interface material.

  • The maximum allowed voltage on the gate of PSMN5R5-60YS,115 is ±20V, with a recommended maximum voltage of 15V to ensure reliable operation.

  • To protect PSMN5R5-60YS,115 from ESD, handle the device with an anti-static wrist strap or mat, and ensure that the device is stored in an anti-static package or bag.

  • The recommended gate resistor value for PSMN5R5-60YS,115 is between 1kΩ to 10kΩ, depending on the specific application and switching frequency.

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