Part Details for PSMN7R6-100BSE by NXP Semiconductors
Overview of PSMN7R6-100BSE by NXP Semiconductors
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Applications
Energy and Power Systems
Medical Imaging
Robotics and Drones
Part Details for PSMN7R6-100BSE
PSMN7R6-100BSE CAD Models
PSMN7R6-100BSE Part Data Attributes
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PSMN7R6-100BSE
NXP Semiconductors
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Datasheet
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PSMN7R6-100BSE
NXP Semiconductors
75A, 100V, 0.0076ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3/2
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| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | NXP SEMICONDUCTORS | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 426 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 75 A | |
| Drain-source On Resistance-Max | 0.0076 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSSO-G2 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 481 A | |
| Reference Standard | IEC-60134 | |
| Surface Mount | YES | |
| Terminal Finish | PURE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |