Part Details for PTB20081 by Ericsson
Overview of PTB20081 by Ericsson
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (6 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for PTB20081
PTB20081 CAD Models
PTB20081 Part Data Attributes
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PTB20081
Ericsson
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Datasheet
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PTB20081
Ericsson
RF Power Bipolar Transistor, 2-Element, Ultra High Frequency Band, Silicon, NPN
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Rohs Code | No | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | ERICSSON POWER MODULES AB | |
Package Description | FLANGE MOUNT, R-CDFM-F4 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Additional Feature | HIGH RELIABILITY | |
Case Connection | EMITTER | |
Collector Current-Max (IC) | 12 A | |
Collector-Emitter Voltage-Max | 25 V | |
Configuration | COMMON EMITTER, 2 ELEMENTS | |
Highest Frequency Band | ULTRA HIGH FREQUENCY BAND | |
JESD-30 Code | R-CDFM-F4 | |
Number of Elements | 2 | |
Number of Terminals | 4 | |
Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | NPN | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | SILICON |
Alternate Parts for PTB20081
This table gives cross-reference parts and alternative options found for PTB20081. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of PTB20081, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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TPV8100B | RF Power Bipolar Transistor | NXP Semiconductors | PTB20081 vs TPV8100B |
MS1533 | RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, M175, 4 PIN | Microsemi Corporation | PTB20081 vs MS1533 |
TVU150 | RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, | Advanced Semiconductor Inc | PTB20081 vs TVU150 |
SD4100 | UHF BAND, Si, NPN, RF POWER TRANSISTOR | STMicroelectronics | PTB20081 vs SD4100 |
SD4100 | RF Power Bipolar Transistor, Ultra High Frequency Band, Silicon, NPN, FM-4 | Advanced Semiconductor Inc | PTB20081 vs SD4100 |
BLV861 | TRANSISTOR 2 CHANNEL, UHF BAND, Si, NPN, RF POWER TRANSISTOR, CERAMIC, SOT-289A, 5 PIN, BIP RF Power | NXP Semiconductors | PTB20081 vs BLV861 |