Datasheets
QH8KA2TCR by: ROHM Semiconductor

Power Field-Effect Transistor,

Part Details for QH8KA2TCR by ROHM Semiconductor

Overview of QH8KA2TCR by ROHM Semiconductor

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Price & Stock for QH8KA2TCR

Part # Distributor Description Stock Price Buy
DISTI # 10AC8606
Newark Mosfet, Dual N-Ch, 30V, 4.5A, Tsmt8, Transistor Polarity:Dual N Channel, Continuous Drain Current Id:4.5A, Drain Source Voltage Vds:30V, On Resistance Rds(On):0.025Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:2.5V, Power Rohs Compliant: Yes |Rohm QH8KA2TCR RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape 0
  • 1 $0.3100
$0.3100 Buy Now
DISTI # QH8KA2TCRCT-ND
DigiKey MOSFET 2N-CH 30V 4.5A TSMT8 Min Qty: 1 Lead time: 16 Weeks Container: Cut Tape (CT), Cut Tape (CT), Digi-Reel®, Digi-Reel®, Tape & Reel (TR) 2200
In Stock
  • 1 $1.1400
  • 1 $1.0200
  • 10 $0.7120
  • 10 $0.6400
  • 100 $0.4679
  • 100 $0.4185
  • 500 $0.3626
  • 500 $0.3230
  • 1,000 $0.3287
  • 1,000 $0.2922
  • 3,000 $0.2855
  • 6,000 $0.2637
  • 9,000 $0.2526
  • 15,000 $0.2412
$0.2412 / $1.1400 Buy Now
DISTI # QH8KA2TCR
Avnet Americas Transistor MOSFET Array Dual N-Channel 30V ±4.5A 8-Pin TSMT Emboss T/R - Tape and Reel (Alt: QH8KA2TCR) RoHS: Not Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 16 Weeks, 0 Days Container: Reel 0
  • 3,000 $0.2818
  • 6,000 $0.2741
  • 12,000 $0.2663
  • 18,000 $0.2586
  • 24,000 $0.2509
  • 30,000 $0.2470
$0.2470 / $0.2818 Buy Now
DISTI # 755-QH8KA2TCR
Mouser Electronics MOSFETs 30V Nch+Nch Si MOSFET RoHS: Compliant 0
  • 3,000 $0.2410
$0.2410 Order Now
Future Electronics   RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 16 Weeks Container: Reel 0
Reel
  • 3,000 $0.2540
$0.2540 Buy Now
Bristol Electronics   3000
RFQ
Quest Components   2400
  • 1 $0.9540
  • 420 $0.3816
  • 2,097 $0.3339
$0.3339 / $0.9540 Buy Now
Quest Components   2268
  • 1 $0.7950
  • 127 $0.3975
  • 504 $0.3180
$0.3180 / $0.7950 Buy Now
DISTI # QH8KA2TCR
TME Transistor: N-MOSFET x2, unipolar, 30V, 4.5A, Idm: 12A, 1.5W, TSMT8 Min Qty: 3 0
  • 3 $0.2910
  • 25 $0.2400
  • 100 $0.2110
  • 500 $0.1910
  • 3,000 $0.1790
$0.1790 / $0.2910 RFQ
Ameya Holding Limited 30V NCH+NCH POWER MOSFET Min Qty: 1 200-Authorized Distributor
  • 1 $0.5600
  • 10 $0.4630
  • 25 $0.4477
  • 100 $0.4324
  • 250 $0.4017
  • 500 $0.3405
  • 1,000 $0.2180
  • 3,000 $0.1860
$0.1860 / $0.5600 Buy Now
DISTI # QH8KA2TCR
Avnet Asia Transistor MOSFET Array Dual N-Channel 30V ?4.5A 8-Pin TSMT Emboss T/R (Alt: QH8KA2TCR) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 24 Weeks, 0 Days 0
RFQ
CoreStaff Co Ltd RoHS(Ship within 1day) - D/C 2021 Date Code: 2021 2800
  • 1 $0.4420
  • 10 $0.3620
  • 50 $0.2070
  • 100 $0.1970
  • 500 $0.1650
  • 1,000 $0.1590
$0.1590 / $0.4420 Buy Now
CoreStaff Co Ltd RoHS(Ship within 1day) - D/C 35
  • 1 $0.4420
  • 10 $0.3620
  • 50 $0.2070
  • 100 $0.1970
  • 500 $0.1650
  • 1,000 $0.1590
$0.1590 / $0.4420 Buy Now

Part Details for QH8KA2TCR

QH8KA2TCR CAD Models

QH8KA2TCR Part Data Attributes

QH8KA2TCR ROHM Semiconductor
Buy Now Datasheet
Compare Parts:
QH8KA2TCR ROHM Semiconductor Power Field-Effect Transistor,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ROHM CO LTD
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 16 Weeks
Samacsys Manufacturer ROHM Semiconductor
Avalanche Energy Rating (Eas) 1.5 mJ
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 4.5 A
Drain-source On Resistance-Max 0.056 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-F8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 12 A
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 10
Transistor Application SWITCHING
Transistor Element Material SILICON

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