Datasheets
QS8J12TCR by:

Power Field-Effect Transistor, 4.5A I(D), 12V, 0.029ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TSMT8, 8 PIN

Part Details for QS8J12TCR by ROHM Semiconductor

Overview of QS8J12TCR by ROHM Semiconductor

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Applications Space Technology Aerospace and Defense Transportation and Logistics Renewable Energy Automotive Robotics and Drones

Price & Stock for QS8J12TCR

Part # Distributor Description Stock Price Buy
DISTI # QS8J12TCR-ND
DigiKey MOSFET 2P-CH 12V 4.5A TSMT8 Lead time: 16 Weeks Container: Tape & Reel (TR) Temporarily Out of Stock
Buy Now
DISTI # 755-QS8J12TCR
Mouser Electronics MOSFET 1.5V Drive Pch+Pch MOSFET 12V 4.5A RoHS: Compliant 0
Order Now
Future Electronics   RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 16 Weeks Container: Reel 0
Reel
  • 3,000 $0.3190
$0.3190 Buy Now
CoreStaff Co Ltd RoHS(Ship within 1day) - D/C 2011 Date Code: 2011 30
  • 1 $0.6740
  • 10 $0.5530
  • 50 $0.3600
  • 100 $0.3420
  • 500 $0.2870
  • 1,000 $0.2770
$0.2770 / $0.6740 Buy Now

Part Details for QS8J12TCR

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QS8J12TCR Part Data Attributes

QS8J12TCR ROHM Semiconductor
Buy Now Datasheet
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QS8J12TCR ROHM Semiconductor Power Field-Effect Transistor, 4.5A I(D), 12V, 0.029ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TSMT8, 8 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer ROHM CO LTD
Package Description SMALL OUTLINE, R-PDSO-F8
Pin Count 8
Reach Compliance Code compliant
ECCN Code EAR99
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 12 V
Drain Current-Max (ID) 4.5 A
Drain-source On Resistance-Max 0.029 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-F8
JESD-609 Code e2
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 1.5 W
Pulsed Drain Current-Max (IDM) 18 A
Surface Mount YES
Terminal Finish Tin/Copper (Sn/Cu)
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

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