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Power Field-Effect Transistor, 9A I(D), 500V, 0.72ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220FM, 3 PIN
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
R5009ANX-ND
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DigiKey | MOSFET N-CH 500V 9A TO220 Min Qty: 1 Lead time: 23 Weeks Container: Bulk, Bulk |
484 In Stock |
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$0.9544 / $1.5000 | Buy Now |
DISTI #
755-R5009ANX
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Mouser Electronics | MOSFET Silicon N-channel MOSFET, 10V Drive, N-Channel, Contains G-S protection diode, Low on-resistance, Fast switching, Wide SOA RoHS: Compliant | 465 |
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$1.0100 / $2.3400 | Buy Now |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 500 Package Multiple: 500 Container: Reel | 0Reel |
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$1.0500 | Buy Now |
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Quest Components | 76 |
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$1.9440 / $3.8880 | Buy Now | |
DISTI #
R5009ANX
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Avnet Silica | Trans MOSFET N-CH 500V �9A 3-Pin TO-220FM Bulk (Alt: R5009ANX) RoHS: Compliant Min Qty: 500 Package Multiple: 500 Lead time: 13 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
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CoreStaff Co Ltd | RoHS(Ship within 1day) - D/C 2014 Date Code: 2014 | 95 |
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$0.9720 / $1.4770 | Buy Now |
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R5009ANX
ROHM Semiconductor
Buy Now
Datasheet
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Compare Parts:
R5009ANX
ROHM Semiconductor
Power Field-Effect Transistor, 9A I(D), 500V, 0.72ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220FM, 3 PIN
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | ROHM CO LTD | |
Part Package Code | TO-220AB | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | ROHM Semiconductor | |
Avalanche Energy Rating (Eas) | 5.4 mJ | |
Case Connection | ISOLATED | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 500 V | |
Drain Current-Max (ID) | 9 A | |
Drain-source On Resistance-Max | 0.72 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 50 W | |
Pulsed Drain Current-Max (IDM) | 36 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 10 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |