Part Details for R5011FNJTL by ROHM Semiconductor
Overview of R5011FNJTL by ROHM Semiconductor
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for R5011FNJTL
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
R5011FNJTLCT-ND
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DigiKey | MOSFET N-CH 500V 11A LPT Min Qty: 1 Lead time: 28 Weeks Container: Cut Tape (CT), Tape & Reel (TR), Digi-Reel®, Tape & Reel (TR) |
1965 In Stock |
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$0.7379 / $1.7700 | Buy Now |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Container: Reel | 0Reel |
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$0.9120 | Buy Now |
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Quest Components | 40 |
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$2.2000 / $3.3000 | Buy Now | |
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Ameya Holding Limited | MOSFET N-CH 500V 11A LPT Min Qty: 1 | 100-Authorized Distributor |
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$1.4853 / $2.5250 | Buy Now |
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CoreStaff Co Ltd | RoHS(Ship within 1day) - D/C 2015 Date Code: 2015 | 50 |
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$1.1000 / $1.6710 | Buy Now |
Part Details for R5011FNJTL
R5011FNJTL CAD Models
R5011FNJTL Part Data Attributes
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R5011FNJTL
ROHM Semiconductor
Buy Now
Datasheet
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Compare Parts:
R5011FNJTL
ROHM Semiconductor
Power Field-Effect Transistor, 11A I(D), 500V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, LPTS, 3/2 PIN
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Rohs Code | Yes | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | ROHM CO LTD | |
Package Description | LPTS, 3/2 PIN | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 8.1 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 500 V | |
Drain Current-Max (ID) | 11 A | |
Drain-source On Resistance-Max | 0.52 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSSO-G2 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 44 A | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for R5011FNJTL
This table gives cross-reference parts and alternative options found for R5011FNJTL. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of R5011FNJTL, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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2SK4183 | Power Field-Effect Transistor, 13A I(D), 525V, 0.58ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ZP, 3 PIN | SANYO Electric Co Ltd | R5011FNJTL vs 2SK4183 |
2SK3512-01SJ | Power Field-Effect Transistor, 12A I(D), 500V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | Fuji Electric Co Ltd | R5011FNJTL vs 2SK3512-01SJ |
FMC12N50E | Power Field-Effect Transistor, 12A I(D), 500V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, T-PACK(S), 3 PIN | Fuji Electric Co Ltd | R5011FNJTL vs FMC12N50E |