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Transistors / Power Field-Effect Transistors / R6006JND3TL1
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R6006JND3TL1 by: ROHM Semiconductor

Power Field-Effect Transistor,

Part Details for R6006JND3TL1 by ROHM Semiconductor

Overview of R6006JND3TL1 by ROHM Semiconductor

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Price & Stock for R6006JND3TL1

Part # Distributor Description Stock Price Buy
DISTI # 846-R6006JND3TL1CT-ND
DigiKey MOSFET N-CH 600V 6A TO252 Min Qty: 1 Lead time: 23 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) 3
In Stock
  • 1 $2.3300
  • 10 $1.9350
  • 100 $1.5401
  • 500 $1.3032
  • 1,000 $1.1058
  • 2,500 $1.0505
  • 5,000 $1.0110
$1.0110 / $2.3300 Buy Now
DISTI # R6006JND3TL1
Avnet Americas Transistor MOSFET N-CH 600V 6A 3-Pin TO-252 Emboss T/R - Tape and Reel (Alt: R6006JND3TL1) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Container: Reel 0
  • 2,500 $1.1574
  • 5,000 $1.1339
  • 10,000 $1.1104
  • 15,000 $1.0870
  • 20,000 $1.0635
  • 25,000 $1.0401
  • 250,000 $1.0166
$1.0166 / $1.1574 Buy Now
DISTI # 755-R6006JND3TL1
Mouser Electronics MOSFET Nch 600V 6A Power MOSFET. R6006JND3 is a power MOSFET with low on-resistance and fast switching, suitable for the switching application. RoHS: Compliant 700
  • 1 $2.3300
  • 10 $1.9400
  • 100 $1.5800
  • 500 $1.3300
  • 1,000 $1.1400
  • 2,500 $1.0700
  • 5,000 $1.0500
$1.0500 / $2.3300 Buy Now
Future Electronics MOSFET N-CH 600V 6A TO252 RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 2500 Container: Cut Tape/Mini-Reel 0
Cut Tape/Mini-Reel
  • 1 $1.2700
  • 15 $1.1900
  • 75 $1.1500
  • 250 $1.1200
  • 1,250 $1.0600
$1.0600 / $1.2700 Buy Now
DISTI # 36532154
Verical Trans MOSFET N-CH 600V 6A 3-Pin(2+Tab) DPAK T/R Min Qty: 74 Package Multiple: 1 Americas - 100
  • 74 $1.1658
  • 100 $1.1137
$1.1137 / $1.1658 Buy Now
DISTI # 54688890
Verical Trans MOSFET N-CH 600V 6A 3-Pin(2+Tab) DPAK T/R Min Qty: 66 Package Multiple: 1 Americas - 70
  • 66 $0.4775
$0.4775 Buy Now
Quest Components   116
  • 1 $2.3320
  • 15 $1.4575
  • 52 $1.2826
$1.2826 / $2.3320 Buy Now
DISTI # R6006JND3TL1
Avnet Americas Transistor MOSFET N-CH 600V 6A 3-Pin TO-252 Emboss T/R - Tape and Reel (Alt: R6006JND3TL1) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Container: Reel 0
  • 2,500 $1.1574
  • 5,000 $1.1339
  • 10,000 $1.1104
  • 15,000 $1.0870
  • 20,000 $1.0635
  • 25,000 $1.0401
  • 250,000 $1.0166
$1.0166 / $1.1574 Buy Now
DISTI # R6006JND3TL1
Avnet Asia Transistor MOSFET N-CH 600V 6A 3-Pin TO-252 Emboss T/R (Alt: R6006JND3TL1) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 24 Weeks, 0 Days 0
RFQ
DISTI # 3018853
element14 Asia-Pacific   RoHS: Compliant Min Qty: 1 Container: Cut Tape 0
  • 1 $2.4579
  • 10 $2.2070
  • 100 $1.7789
  • 500 $1.4615
  • 1,000 $1.2105
$1.2105 / $2.4579 Buy Now
DISTI # 3018853RL
Farnell MOSFET, N-CH, 6A, 600V, TO-252 RoHS: Compliant Min Qty: 2500 Lead time: 26 Weeks, 1 Days Container: Reel 0
  • 2,500 $1.0721
$1.0721 Buy Now
DISTI # 3018853
Farnell MOSFET, N-CH, 6A, 600V, TO-252 RoHS: Compliant Min Qty: 2500 Lead time: 26 Weeks, 1 Days Container: Cut Tape 0
  • 2,500 $1.0721
$1.0721 Buy Now

Part Details for R6006JND3TL1

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R6006JND3TL1 Part Data Attributes:

Parametric Data
R6006JND3TL1 ROHM Semiconductor
Buy Now Datasheet
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R6006JND3TL1 ROHM Semiconductor Power Field-Effect Transistor,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ROHM CO LTD
Package Description SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code compliant
ECCN Code EAR99
Date Of Intro 2018-01-09
Samacsys Manufacturer ROHM Semiconductor
Avalanche Energy Rating (Eas) 117 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 6 A
Drain-source On Resistance-Max 0.936 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 18 A
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

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