Datasheets
R6006KNX by: ROHM Semiconductor

Power Field-Effect Transistor,

Part Details for R6006KNX by ROHM Semiconductor

Overview of R6006KNX by ROHM Semiconductor

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Price & Stock for R6006KNX

Part # Distributor Description Stock Price Buy
Quest Components   180
  • 1 $2.4280
  • 50 $1.3354
  • 113 $1.2140
$1.2140 / $2.4280 Buy Now
Ameya Holding Limited Transistors FETs, MOSFETs Single Min Qty: 1 55-Authorized Distributor
  • 1 $2.1300
  • 10 $1.6000
  • 50 $1.0700
  • 100 $0.8500
  • 500 $0.8000
  • 1,000 $0.7700
$0.7700 / $2.1300 Buy Now
CoreStaff Co Ltd RoHS(Ship within 1day) - D/C 2020 Date Code: 2020 226
  • 1 $1.5420
  • 10 $1.2640
  • 50 $0.7100
  • 100 $0.6740
  • 500 $0.6290
  • 1,000 $0.6070
$0.6070 / $1.5420 Buy Now

Part Details for R6006KNX

R6006KNX CAD Models

R6006KNX Part Data Attributes:

R6006KNX ROHM Semiconductor
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R6006KNX ROHM Semiconductor Power Field-Effect Transistor,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ROHM CO LTD
Package Description TO-220FM, 3 PIN
Reach Compliance Code compliant
ECCN Code EAR99
Date Of Intro 2017-10-05
Samacsys Description 600V 6A TO-220FM, High-speed switching Power MOSFET
Samacsys Manufacturer ROHM Semiconductor
Samacsys Modified On 2023-03-07 16:10:32
Avalanche Energy Rating (Eas) 65 mJ
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 6 A
Drain-source On Resistance-Max 0.83 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 20 pF
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 40 W
Pulsed Drain Current-Max (IDM) 18 A
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for R6006KNX

This table gives cross-reference parts and alternative options found for R6006KNX. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of R6006KNX, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
R6006KNXC7G Power Field-Effect Transistor, 6A I(D), 600V, 0.83ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220FM, 3 PIN ROHM Semiconductor R6006KNX vs R6006KNXC7G

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