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Power Field-Effect Transistor,
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
38AH5893
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Newark | Mosfet, N-Ch, 600V, 7A, 150Deg C, 78W, Transistor Polarity:N Channel, Continuous Drain Current Id:7A, Drain Source Voltage Vds:600V, On Resistance Rds(On):0.57Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:4V, Power Rohs Compliant: Yes |Rohm R6007END3TL1 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 23 |
|
$1.1100 / $2.3500 | Buy Now |
DISTI #
846-R6007END3TL1CT-ND
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DigiKey | MOSFET N-CH 600V 7A TO252 Min Qty: 1 Lead time: 23 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
2500 In Stock |
|
$0.9799 / $2.2600 | Buy Now |
DISTI #
R6007END3TL1
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Avnet Americas | Transistor MOSFET N-CH 600V 7A 3-Pin TO-252 Emboss T/R - Tape and Reel (Alt: R6007END3TL1) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Container: Reel | 0 |
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$0.9854 / $1.1218 | Buy Now |
DISTI #
755-R6007END3TL1
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Mouser Electronics | MOSFET Nch 600V 7A Power MOSFET. Power MOSFET R6007END3 is suitable for switching power supply. RoHS: Compliant | 0 |
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$0.9790 / $2.2600 | Order Now |
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Future Electronics | 600V,7A,570MOHM,DPAK RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel | 0Reel |
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$0.9900 | Buy Now |
DISTI #
76845634
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Verical | Trans MOSFET N-CH 600V 7A 3-Pin(2+Tab) DPAK T/R Min Qty: 55 Package Multiple: 1 | Americas - 2500 |
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$0.5175 / $0.5813 | Buy Now |
DISTI #
65127826
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Verical | Trans MOSFET N-CH 600V 7A 3-Pin(2+Tab) DPAK T/R Min Qty: 71 Package Multiple: 1 Date Code: 2201 | Americas - 2490 |
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$1.0363 / $1.2120 | Buy Now |
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Quest Components | 1992 |
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$0.8175 / $2.1800 | Buy Now | |
DISTI #
R6007END3TL1
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Avnet Americas | Transistor MOSFET N-CH 600V 7A 3-Pin TO-252 Emboss T/R - Tape and Reel (Alt: R6007END3TL1) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Container: Reel | 0 |
|
$0.9854 / $1.1218 | Buy Now |
DISTI #
C1S625901874198
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Chip1Stop | MOSFET RoHS: Compliant pbFree: Yes Container: Cut Tape | 2500 |
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$0.4060 / $0.5040 | Buy Now |
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R6007END3TL1
ROHM Semiconductor
Buy Now
Datasheet
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Compare Parts:
R6007END3TL1
ROHM Semiconductor
Power Field-Effect Transistor,
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ROHM CO LTD | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Date Of Intro | 2018-06-29 | |
Samacsys Manufacturer | ROHM Semiconductor | |
Avalanche Energy Rating (Eas) | 133 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain Current-Max (ID) | 7 A | |
Drain-source On Resistance-Max | 0.62 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-252 | |
JESD-30 Code | R-PSSO-G2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 14 A | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for R6007END3TL1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of R6007END3TL1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
SIHD7N60E-GE3 | TRANSISTOR POWER, FET, FET General Purpose Power | Vishay Siliconix | R6007END3TL1 vs SIHD7N60E-GE3 |
SIHU6N65E-GE3 | Power Field-Effect Transistor, 7A I(D), 650V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, IPAK-3 | Vishay Intertechnologies | R6007END3TL1 vs SIHU6N65E-GE3 |
SPP07N60C3HKSA1 | Power Field-Effect Transistor, 7.3A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | R6007END3TL1 vs SPP07N60C3HKSA1 |
SIHD7N60E-GE3 | Power Field-Effect Transistor, 7A I(D), 609V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, DPAK-3/2 | Vishay Intertechnologies | R6007END3TL1 vs SIHD7N60E-GE3 |
SIHD6N65E-GE3 | Power Field-Effect Transistor, 7A I(D), 650V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3/2 | Vishay Intertechnologies | R6007END3TL1 vs SIHD6N65E-GE3 |
SSF7NS60D | Power Field-Effect Transistor, 7A I(D), 600V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK-3/2 | Suzhou Good-Ark Electronics Co Ltd | R6007END3TL1 vs SSF7NS60D |
TK7P60W | Nch 500V<VDSS≤700V | Toshiba America Electronic Components | R6007END3TL1 vs TK7P60W |
SIHD7N60ET1-GE3 | Power Field-Effect Transistor, 7A I(D), 609V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, DPAK-3/2 | Vishay Intertechnologies | R6007END3TL1 vs SIHD7N60ET1-GE3 |
SPP07N65C3XKSA1 | Power Field-Effect Transistor, 7.3A I(D), 650V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | R6007END3TL1 vs SPP07N65C3XKSA1 |
CDM7-700LR | Power Field-Effect Transistor, 7A I(D), 700V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3/2 | Central Semiconductor Corp | R6007END3TL1 vs CDM7-700LR |