Part Details for R6020ANZC8 by ROHM Semiconductor
Overview of R6020ANZC8 by ROHM Semiconductor
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for R6020ANZC8
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
39276427
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Verical | Trans MOSFET N-CH Si 600V 20A 3-Pin(3+Tab) TO-3PF Bulk Min Qty: 17 Package Multiple: 1 Date Code: 2001 | Americas - 360 |
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$4.0429 / $4.6882 | Buy Now |
DISTI #
43706389
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Verical | Trans MOSFET N-CH Si 600V 20A 3-Pin(3+Tab) TO-3PF Bulk Min Qty: 13 Package Multiple: 1 Date Code: 1442 | Americas - 26 |
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$2.5000 | Buy Now |
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Quest Components | 296 |
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$4.3593 / $7.9260 | Buy Now | |
DISTI #
C1S625901169360
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Chip1Stop | MOSFET RoHS: Compliant pbFree: Yes Container: Tube | 26 |
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$2.0000 / $2.0400 | Buy Now |
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CoreStaff Co Ltd | RoHS(Ship within 1day) - D/C 2020 Date Code: 2020 | 360 |
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$2.6420 / $4.0140 | Buy Now |
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CoreStaff Co Ltd | RoHS(Ship within 1day) - D/C 2014 Date Code: 2014 | 10 |
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$2.6420 / $4.0140 | Buy Now |
Part Details for R6020ANZC8
R6020ANZC8 CAD Models
R6020ANZC8 Part Data Attributes:
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R6020ANZC8
ROHM Semiconductor
Buy Now
Datasheet
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Compare Parts:
R6020ANZC8
ROHM Semiconductor
Power Field-Effect Transistor, 20A I(D), 600V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, TO-3PF, 3 PIN
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | ROHM CO LTD | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 26.7 mJ | |
Case Connection | ISOLATED | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain Current-Max (ID) | 20 A | |
Drain-source On Resistance-Max | 0.22 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSFM-T3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 80 A | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 10 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |